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Selective etching of carbon-doped low-k dielectrics

  • US 20050026430A1
  • Filed: 08/01/2003
  • Published: 02/03/2005
  • Est. Priority Date: 08/01/2003
  • Status: Active Grant
First Claim
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1. A plasma etch process for selectively etching a layer of low-k dielectric material having a dielectric constant less than 4, comprising:

  • introducing into a plasma etch chamber, in which the layer of low-k dielectric material is situated, an etching gas mixture comprising a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and a hydrogen-rich hydrofluorocarbon gas; and

    maintaining a plasma of the etching gas mixture in the plasma etch chamber to etch the layer of low-k dielectric material.

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