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Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout

  • US 20050028129A1
  • Filed: 06/29/2004
  • Published: 02/03/2005
  • Est. Priority Date: 06/30/2003
  • Status: Active Grant
First Claim
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1. A method of optimizing lithographic apparatus settings and optimizing optical proximity correction (OPC) for a pattern to be formed on a surface of a substrate, said method comprising the steps of:

  • (a) identifying a critical dense pitch and corresponding to a first critical feature and a second critical feature;

    (b) determining optimal lithographic apparatus settings for the critical feature;

    (c) performing OPC based on an analysis of the critical feature;

    (d) performing OPC adjustments on the other critical feature; and

    (e) optimizing lithographic apparatus settings for the other critical feature.

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