Method for creating alternating phase masks
First Claim
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1. A method for creating a phase mask for lithographic exposure operations, the method comprising:
- determining locations of a plurality of critical structures, each critical structure including at least two sides;
defining phase-shifting regions on the two sides of ones of the critical structures that fall below an extent limit; and
carrying out at least one phase shifter correction such that at least two mutually facing phase-shifting regions are joined together to form a contiguous phase-shifting region if their distance from one another falls below a predetermined minimum distance.
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Abstract
A method is provided for creating a phase mask for lithographic exposure operations. In this case, phase-shifting regions (10) with a different phase are defined on both sides of critical structures (6), which fall below an extent limit. At least one phase shifter correction is carried out such that at least two mutually facing phase-shifting regions (10) are joined together to form a contiguous phase-shifting region (10) if their distance from one another falls below a predetermined minimum distance.
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Citations
25 Claims
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1. A method for creating a phase mask for lithographic exposure operations, the method comprising:
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determining locations of a plurality of critical structures, each critical structure including at least two sides;
defining phase-shifting regions on the two sides of ones of the critical structures that fall below an extent limit; and
carrying out at least one phase shifter correction such that at least two mutually facing phase-shifting regions are joined together to form a contiguous phase-shifting region if their distance from one another falls below a predetermined minimum distance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification