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Semiconductor device and method for fabricating the same

  • US 20050029531A1
  • Filed: 08/06/2004
  • Published: 02/10/2005
  • Est. Priority Date: 08/07/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an active layer made of a first semiconductor layer formed on a substrate, wherein a first oxidized area made of an oxide layer is formed on the active layer.

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