Nitride-based semiconductor device and method of fabricating the same
First Claim
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1. A method of fabricating a nitride-based semiconductor device, comprising steps of:
- etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure; and
thereafter forming an n-side electrode on said etched back surface of said first semiconductor layer.
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Abstract
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
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Citations
20 Claims
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1. A method of fabricating a nitride-based semiconductor device, comprising steps of:
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etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure; and
thereafter forming an n-side electrode on said etched back surface of said first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of fabricating a nitride-based semiconductor device, comprising steps of:
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etching a nitrogen face of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure by dry etching; and
thereafter forming an n-side electrode on said etched nitrogen face of said first semiconductor layer.
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20-27. -27. (Cancelled)
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