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Structure and method of forming a dual-trench field effect transistor

  • US 20050029618A1
  • Filed: 09/03/2004
  • Published: 02/10/2005
  • Est. Priority Date: 01/30/2001
  • Status: Abandoned Application
First Claim
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1. A field effect transistor comprising:

  • a semiconductor region of a first conductivity type having a thickness defined by the distance between upper and lower surfaces of the semiconductor region;

    a well region of a second conductivity type over the semiconductor region;

    a source region of the first conductivity type in an upper portion of the well region;

    a gate trench adjacent to the source region, the gate trench extending through the well region and terminating within an upper half of the semiconductor region; and

    a stripe trench extending through the well region and terminating within a lower half of the semiconductor region at a depth above the bottom surface of the semiconductor region, the stripe trench being filled with a semiconductor material of the second conductivity type such that;

    (i) the filled stripe trench is contiguous with the well region, and (ii) the semiconductor material of the second conductivity type forms a PN junction with the semiconductor region.

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