Semiconductor device

• US 20050030107A1
• Filed: 07/14/2004
• Published: 02/10/2005
• Est. Priority Date: 08/08/2003
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Shimizu, Toshihiko, Kusakari, Yuri, Matsunaga, Yoshikuni
• Granted Patent: US 7,116,175 B2
• Time in Patent Office: Days
• US Class Current: 330/307
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 Multilayer substrate
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H03F 2200/111 : the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/451 : the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/68 : Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602

Abstract

Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.

Claims

1. A semiconductor device, comprising:

a plurality of power amplifier circuits configured in a multistage-connected form,

wherein a first to a final stage of the plurality of amplifier circuits are formed over one semiconductor substrate of silicon,

wherein the plurality of amplifier circuits comprise field effect transistors,

wherein drain and source electrodes of the field effect transistors are respectively formed over a main surface and a back surface of the semiconductor substrate,

wherein the respective source electrodes of the plurality of field effect transistors are electrically connected to one another at the back surface of the semiconductor substrate,

wherein the respective source electrodes are connected to a fixed potential, and

wherein resistivity of the semiconductor substrate constituted of the silicon is less than about 5 mΩ

·

cm.

2. A semiconductor device according to claim 1, wherein the power amplifier circuits operate in one bandwidth of an 800 MHz band, a 900 MHz band, an 1800 MHz band and a 1900 MHz band.

3. A semiconductor device according to claim 1, wherein the semiconductor substrate is mounted over a wiring board, and the sources of the field effect transistors are respectively electrically connected to a fixed potential of the wiring board.

4. A semiconductor device according to claim 1, wherein the semiconductor substrate is provided with passive elements for matching circuits.

5. A semiconductor device according to claim 4, wherein the semiconductor substrate is mounted over a wiring board and provided with input and output matching circuits for each of the amplifier circuits.

6. A semiconductor device according to claim 4, wherein shield layers are provided around the passive elements for the matching circuits, and wherein the shield layers are electrically connected to the semiconductor substrate through semiconductor regions and electrically connected to a fixed potential via an electrode over the back surface of the semiconductor substrate.

7. A semiconductor device according to claim 1, wherein the semiconductor substrate is provided with a bias circuit and a control circuit used for the amplifier circuits.

8. A semiconductor device according to claim 1, wherein a multiband system capable of coping with high frequency signals lying in a plurality of frequency bands is adopted for the semiconductor device.

9. A semiconductor device according to claim 1, wherein the amplifier circuits respectively comprise three amplifying stages.

10. A semiconductor device, comprising:

first and second power amplifier circuits differing in operating frequency, which respectively comprise a plurality of amplifier circuits configured in a multistage-connected form; and

passive elements for matching circuits employed in the first and second power amplifier circuits and a bias circuit and a control circuit,

wherein a first to a final stage of the plurality of amplifier circuits of the first and second power amplifier circuits are formed over one silicon semiconductor substrate,

wherein the plurality of amplifier circuits respectively comprise field effect transistors,

wherein drain and source electrodes of the field effect transistors are respectively formed over a main surface and a back surface of the semiconductor substrate,

wherein the respective source electrodes of the plurality of field effect transistors are electrically connected to one another in the back surface of the semiconductor substrate,

wherein the source electrodes are respectively connected to a fixed potential, and

wherein resistivity of the semiconductor substrate is equal to or less than about 10 mΩ

·

cm.

11. A semiconductor device, comprising:

a plurality of amplifying stages each comprising amplifier circuits; and

secondary circuits,

said all amplifying stages and said secondary circuits being provided over a same semiconductor chip,

wherein the plurality of amplifying stages are respectively formed of field effect transistors placed over a semiconductor substrate of silicon of the semiconductor chip,

wherein the amplifier circuits are disposed on a periphery of a main surface of the semiconductor chip, and

wherein the secondary circuits are placed inside the periphery of the main surface of the semiconductor chip.

12. A semiconductor device according to claim 11, wherein resistivity of the semiconductor substrate is smaller than 10 mΩ

·

cm, the field effect transistors are respectively configured as horizontal type field effect transistors, and the sources of the field effect transistors are electrically connected to the silicon substrate through semiconductor regions and are electrically connected to a fixed potential via an electrode over the back surface of the semiconductor substrate.

13. A semiconductor device of a multiband system, which is capable of coping with high frequency signals lying in a plurality of different frequency bands, said semiconductor device comprising:

a plurality of amplifier circuits which respectively adapt to the high frequency signals lying in the plurality of different frequency bands; and

a plurality of amplifying stages which constitute the plurality of amplifier circuits respectively,

wherein each of the plurality of amplifying stages are provided over one semiconductor chip,

wherein the plurality of amplifying stages are respectively formed of field effect transistors placed over a semiconductor substrate formed of silicon of the semiconductor chip, and

wherein the amplifying stages corresponding to a final stage of the plurality of amplifier circuits are placed at sides of the semiconductor chip opposite to each other.

14. A semiconductor device according to claim 13, wherein the final amplifying stages of the respective amplifier circuits are disposed to be point-symmetric to each other.

15. A semiconductor device according to claim 13, wherein resistivity of the semiconductor substrate is less than 10 mΩ

·

cm, the field effect transistors are respectively configured as horizontal type field effect transistors, and the sources of the field effect transistors are electrically connected to the semiconductor substrate through semiconductor regions and are electrically connected to a fixed potential via an electrode over the back surface of the semiconductor substrate, and

wherein the semiconductor chip is provided with passive elements for matching circuits, and a bias circuit and a control circuit for the amplifier circuits.

16. A semiconductor device according to claim 14, wherein the plurality of amplifier circuits respectively include three amplifying stages.

17. A semiconductor device, comprising

a plurality of amplifying stages constituting amplifier circuits, said amplifying stages being provided over a semiconductor chip,

wherein the plurality of amplifying stages are respectively formed of field effect transistors placed over a semiconductor substrate constituted of silicon of the semiconductor chip, and

wherein electrodes electrically connected to a fixed potential are disposed between at least two of the plurality of amplifying stages.

18. A semiconductor device according to claim 17, wherein resistivity of the semiconductor substrate is smaller than 10 mΩ

·

cm, the field effect transistors are respectively configured as horizontal type field effect transistors, and the sources of the field effect transistors are electrically connected to the semiconductor substrate through semiconductor regions and are electrically connected to a fixed potential via an electrode over the back surface of the semiconductor substrate.

19. A semiconductor device, comprising:

a plurality of amplifying stageshaving amplifier circuits respectively, said amplifying stages being provided over the same semiconductor chip,

wherein the plurality of amplifying stages are respectively formed of field effect transistors placed over a semiconductor substrate constituted of silicon of the semiconductor chip, and

wherein the plurality of amplifying stages are disposed to provide input and output units of the respective, adjacent ones of the amplifying stages respectively opposed.

20. A semiconductor device according to claim 19, wherein resistivity of the semiconductor substrate is smaller than 10 mΩ

-cm, the field effect transistors are respectively configured as horizontal type field effect transistors, and the sources of the field effect transistors are electrically connected to the semiconductor substrate through semiconductor regions and are electrically connected to a fixed potential via an electrode on a back surface of the semiconductor substrate.

21. A semiconductor device suitable for mounting in a cellular phone, comprising:

power amplifier circuits,

wherein the power amplifier circuits comprise a plurality of amplifier circuits constituted of field effect transistors configured in a multistage-connected form,

wherein the respective power amplifier circuits are connected to one another via impedance matching circuits comprising passive elements,

wherein the power amplifier circuits are controlled by a control circuit, and

wherein the amplifying circuits constituting the power amplifier circuits are formed over a single semiconductor substrate formed of silicon.

22. A semiconductor device, comprising:

a first power amplifier circuit formed over a first semiconductor chip and comprising a plurality of amplifier circuits configured in a multistage-connected form; and

a wiring board having the first semiconductor chip paged thereover,

wherein the first semiconductor chip has a semiconductor substrate formed of silicon,

wherein the plurality of amplifying circuits comprise field effect transistors formed in the semiconductor substrate, and

wherein a semiconductor chip including the power amplifier circuits and mounted over the wiring board is present exclusively on the first semiconductor chip.

23. A semiconductor device according to claim 22, wherein drain and source electrodes of a plurality of the field effect transistors constituting the plurality of amplifier circuits are respectively formed over a main surface and a back surface of the semiconductor substrate,

wherein the respective source electrodes of the plurality of field effect transistors are electrically connected to one another at the back surface of the semiconductor substrate,

wherein the source electrodes are connected to a fixed potential, and

wherein resistivity of the semiconductor substrate is smaller than 10 mΩ

·

cm.

24. A semiconductor device according to claim 22, wherein the plurality of amplifier circuits have systems operated in different frequency bands.

25. A semiconductor device according to claim 22, wherein the first power amplifier circuit operates in one of an 800 MHz band, a 900 MHz band, a 1800 MHz band and a 1900 MHz band.