Method for making a color image sensor with recessed contact apertures prior to thinning

• US 20050032265A1
• Filed: 08/30/2002
• Published: 02/10/2005
• Est. Priority Date: 08/31/2001
• Status: Active Grant

• Current Assignee: e2v semiconductors SAS
• Original Assignee: e2v semiconductors SAS
• Inventors: Pourquier, Eric
• Granted Patent: US 6,960,483 B2
• Time in Patent Office: Days
• US Class Current: 438/48
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors

Abstract

The invention relates to method for making a color image sensor. The method comprises:

• • the formation, on the front face of a semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone being surrounded by input/output pads (22),
  • the transfer of the wafer by its front face against the front face of a temporary supporting substrate (20),
  • the elimination of the major part of the thickness of the silicon wafer, leaving a fine silicon layer (30) on the substrate, this fine silicon layer comprising the image detection circuits. Furthermore:
    • • firstly, layers of color filters (18) are deposited and then etched on the semiconductive layer thus thinned,
      • secondly, prior to the transfer of the semiconductive wafer to the substrate, on the front face of the wafer, metallized apertures (25) are formed extending to a greater depth than the elements of the image detection circuits formed on the surface of the wafer, and the step of elimination of the major part of the thickness of the semiconductive wafer includes the baring, from the rear, of the metallization (22) of the metallized apertures.

Claims

1. A method for making an image sensor, comprising the steps of:

forming, on the front face of a semiconductive wafer, of a series of active zones comprising image detection circuits and each corresponding to a respective image sensor, each active zone being surrounded by input/output pads;

transferring of the wafer by its front face against the front face of a temporary supporting substrate;

eliminating of the major part of the thickness of the silicon wafer, leaving a fine silicon layer the substrate, this fine silicon layer comprising the image detection circuits,

depositing, layers of color filters and then etching on the semiconductive layer thus thinned,

prior to the transfer of the semiconductive wafer to the substrate, on the front face of the wafer, metallized apertures are formed extending to a greater depth than the elements of the image detection circuits formed on the surface of the wafer, eliminating the major part of the thickness of the semiconductive wafer includes the baring, from the rear, of the metallization of the metallized apertures,

dicing, the substrate into individual sensors after the deposition and the etching of the color filters.

2. The method according to claim 1, wherein the remaining thickness of the thinned semiconductive layer is about 3 to 20 micrometers.

3. The method according to claim 1, wherein a sheet of transparent material is placed on the thinned semiconductive layer covered with color filters.

4. The method according to claim 2, wherein a sheet of transparent material is placed on the thinned semiconductive layer covered with color filters.