Photoresists and methods for use thereof

• US 20050032373A1
• Filed: 04/09/2004
• Published: 02/10/2005
• Est. Priority Date: 04/09/2003
• Status: Active Grant

• Current Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Original Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Inventors: Cameron, James F., Sung, Jin Wuk, Barclay, George G., Trefonas, Peter III
• Granted Patent: US 7,297,616 B2
• Time in Patent Office: Days
• US Class Current: 438/689
• CPC Class Codes: G03F 7/0392 the macromolecular compound being present in a chemically amplified positive photoresist composition
• CPC Class Codes: G03F 7/0397 the macromolecular compound having an alicyclic moiety in a side chain
• CPC Class Codes: G03F 7/16 Coating processes; Apparatus therefor applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: G03F 7/405 Treatment with inorganic or organometallic reagents after imagewise removal

Abstract

New photoresists are provided that can be applied and imaged with reduced undesired outgassing and/or as thick coating layers. Preferred resists of the invention are chemically-amplified positive-acting resists that contain photoactive and resin components.

Claims

1. A method for providing an ion-implanted semiconductor substrate comprising:

providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,

wherein the photoresist comprises a resin that comprises, prior to photoactivation, photoacid-labile moieties that are spaced by at least 1 atom from the resin backbone; and

applying ions to the substrate.

2. A method for providing an ion-implanted semiconductor substrate comprising:

providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,

wherein the photoresist comprises, prior to photoactivation, a resin that comprises units that contain photoacid-labile moieties in an amount of 12 mole percent or less, based on total units of the resin; and

applying ions to the substrate.

3. A method for providing an ion-implanted semiconductor substrate comprising:

providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,

wherein the photoresist comprises, prior to photoactivation, a resin that comprises units that contain photoacid-labile moieties that have multiple covalent linkages to the resin prior to a photoacid-deblocking reaction; and

applying ions to the substrate.

4. A method for providing an ion-implanted semiconductor substrate comprising:

providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,

wherein the photoresist comprises, prior to photoactivation, one or more components that are covalently linked by a group that can be cleaved by exposure and/or photogenerated acid; and

applying ions to the substrate.

5. A method for providing an ion-implanted semiconductor substrate comprising:

providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,

wherein the photoresist comprises, prior to photoactivation, photoacid-labile groups that generate upon photoactivation a cleavage product that comprises 5 or more carbon atoms and/or a single or multiple ring structure; and

applying ions to the substrate.

6. A method for providing an ion-implanted semiconductor substrate comprising:

providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,

treating the photoresist composition image thermally or with radiation to remove volatile materials of the photoresist composition; and

applying ions to the substrate.

7. A method for providing an ion-implanted semiconductor substrate comprising:

providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,

treating the photoresist composition image to provide a coating thereon; and

applying ions to the substrate.

8. A coated substrate comprising:

a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises a resin that comprises, prior to photoactivation, photoacid-labile moieties that are spaced by at least 1 atom from the resin backbone; and

the wafer having applied dopant ions.

9. A coated substrate comprising:

a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises, prior to photoactivation, a resin that comprises units that contain photoacid-labile moieties in an amount of 12 mole percent or less, based on total units of the resin; and

the wafer having applied dopant ions.

10. A coated substrate comprising:

a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises, prior to photoactivation, a resin that comprises units that contain photoacid-labile moieties that have multiple covalent linkages to the resin prior to a photoacid-deblocking reaction; and

the wafer having applied dopant ions.

11. A coated substrate comprising:

a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises, prior to photoactivation, one or more components that are covalently linked by a group that can be cleaved by exposure and/or photogenerated acid; and

the wafer having applied dopant ions.

12. A coated substrate comprising:

a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises, prior to photoactivation, photoacid-labile groups that generate upon photoactivation a cleavage product that comprises 5 or more carbon atoms and/or a single or multiple ring structure; and

the wafer having applied dopant ions.

13. A coated substrate comprising:

a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that is coated; and

the wafer having applied dopant ions.

14. (cancelled)

15. A chemically-amplified positive-acting photoresist composition that comprises:

i) one or more photoacid generator compounds and

ii) a resin or component chosen from among a resin that comprises units that contain photoacid-labile moieties in an amount of 8 mole percent or less, based on total units of the resin;

a resin that comprises units that contain photoacid-labile moieties that have multiple covalent linkages to the resin prior to a photoacid-deblocking reaction;

one or more components that are covalently linked by a group that can be cleaved by exposure and/or photogenerated acid;

a resin that comprises units that contain photoacid-labile moieties in an amount of 8 mole percent or less, based on total units of the resin; and

a resin that comprises units that contain photoacid-labile moieties that have multiple covalent linkages to the resin prior to a photoacid-deblocking reaction.

16-19. -19. (cancelled)