Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization
First Claim
1. A process for forming a multilayer three-dimensional structure, comprising:
- (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and
(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;
wherein the formation of at least one layer comprises;
(i) forming a desired pattern of dielectric material on the substrate or on previously deposited material wherein the patterning of the dielectric results in at least one void in the dielectric material that exposes a portion of the substrate or previously deposited material;
(ii) applying a seed layer material to the dielectric material and to the exposed portions of the substrate or previously deposited material;
(iii) depositing a conductive material into the at least one void in the dielectric; and
(iv) after depositing the conductive material, removing at least a portion of the seed layer material located on the dielectric material.
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Accused Products
Abstract
Embodiments of the present invention provide mesoscale or microscale three-dimensional structures (e.g. components, device, and the like). Embodiments relate to one or more of (1) the formation of such structures which incorporate sheets of dielectric material and/or wherein seed layer material used to allow electrodeposition over dielectric material is removed via planarization operations; (2) the formation of such structures wherein masks used for at least some selective patterning operations are obtained through transfer plating of masking material to a surface of a substrate or previously formed layer, and/or (3) the formation of such structures wherein masks used for forming at least portions of some layers are patterned on the build surface directly from data representing the mask configuration, e.g. in some embodiments mask patterning is achieved by selectively dispensing material via a computer controlled inkjet nozzle or array or via a computer controlled extrusion device.
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Citations
31 Claims
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1. A process for forming a multilayer three-dimensional structure, comprising:
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(a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and
(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;
wherein the formation of at least one layer comprises;
(i) forming a desired pattern of dielectric material on the substrate or on previously deposited material wherein the patterning of the dielectric results in at least one void in the dielectric material that exposes a portion of the substrate or previously deposited material;
(ii) applying a seed layer material to the dielectric material and to the exposed portions of the substrate or previously deposited material;
(iii) depositing a conductive material into the at least one void in the dielectric; and
(iv) after depositing the conductive material, removing at least a portion of the seed layer material located on the dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process for forming a multilayer three-dimensional structure, comprising:
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(a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and
(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;
wherein the formation of at least one layer comprises;
(i) forming a desired pattern of a first material on the substrate or on previously deposited material wherein the patterning of the first material results in at least one void in the first material that exposes a portion of the substrate or previously deposited material;
(ii) applying a seed layer material to the first material and to the exposed portions of the substrate or previously deposited material;
(iii) depositing a first conductive material into the at least one void in the first material; and
(iv) after depositing the first conductive material, removing at least a portion of the seed layer material located on the first material. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A process for forming a multilayer three-dimensional structure, comprising:
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(a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and
(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;
wherein the formation of at least one layer comprises;
(i) forming a desired pattern of dielectric material on the substrate or on previously deposited material; and
thereafter performing at least one of the following;
(1) depositing a structural conductive material;
(2) depositing a sacrificial conductive material;
or(3) depositing a seed layer.
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24. A process for forming a multilayer three-dimensional structure, comprising:
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(a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and
(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;
wherein the formation of at least one layer comprises;
(i) forming a desired pattern of a first material on the substrate or on previously deposited material; and
thereafter applying a non-planar seed layer material which will be used as base onto which a second material will be subsequently electrodeposited. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31)
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Specification