Processing a workpiece with ozone and a halogenated additive

• US 20050034745A1
• Filed: 08/11/2004
• Published: 02/17/2005
• Est. Priority Date: 05/09/1997
• Status: Abandoned Application

• Current Assignee: Semitool Incorporated (Applied Materials Incorporated)
• Original Assignee: Semitool Incorporated (Applied Materials Incorporated)
• Inventors: Herron, Mark, Bergman, Eric J., Aegerter, Brian
• Application Number:
  US10/917,094
• Publication Number:
  US 20050034745A1
• Time in Patent Office: Days
• US Class Current: 134/26
• CPC Class Codes: B08B 2203/005 the liquid being ozonated
• CPC Class Codes: B08B 2203/007 Heating the liquid
• CPC Class Codes: B08B 2230/01 Cleaning with steam
• CPC Class Codes: B08B 3/00 Cleaning by methods involving the use or presence of liquid or steam B08B9/00 takes precedence
• CPC Class Codes: B08B 3/02 Cleaning by the force of jets or sprays
• CPC Class Codes: B08B 3/044 using agitated containers in which the liquid and articles or material are placed by means of ultrasonic vibrations B08B3/12; cleaning casks or barrels by agitating B08B9/0817; mixers with shaking, oscillating or vibrating mechanisms B01F31/00
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: B08B 7/00 Cleaning by methods not provided for in a single other subclass or a single group in this subclass
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02054 combining dry and wet cleaning steps H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/6704 for wet cleaning or washing
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 23/49582 Metallic layers on lead frames
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 3/3426 characterised by the leads
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

In a process for removing an anti-reflective coating, a workpiece such as a semiconductor wafer is placed in a support in a process chamber. A heated liquid including a halogenated additive is applied onto the workpiece, forming a liquid layer on the workpiece. The thickness of the liquid layer is controlled. Ozone is introduced into the process chamber by injection into the liquid or directly into the process chamber. Ozone oxidizes and removes the film on the workpiece. The methods are especially useful for anti-reflective coating or sacrificial light absorbing layers.

Claims

1. A method for cleaning or processing a workpiece, comprising in any order the steps of:

placing the workpiece into a process chamber;

applying a heated liquid including a halogenated additive onto the workpiece, with the heated liquid forming a layer on the workpiece;

controlling the thickness of the liquid layer on the workpiece, and introducing ozone gas into the process chamber, with ozone gas diffusing through the liquid layer and oxidizing a contaminant or film on the workpiece.

2. The method of claim 1 wherein the liquid comprises water and HF.

3. The method of claim 1 further including the step of heating the liquid to about 26-200°

C.

4. The method of claim 1 with ozone gas entrained in the heated liquid and with entrained ozone contacting the workpiece via bulk transfer.

5. The method of claim 1 where the halogenated additive is gaseous HF injected into the liquid.

6. The method of claim 1 further comprising the step of controlling the thickness of the liquid by spinning the workpiece.

7. The method of claim 1 further comprising the step of controlling the thickness of the liquid by controlling the flow rate of the liquid onto the workpiece.

8. The method of claim 1 where the ozone is introduced into the chamber as a dry gas.

9. The method of claim 1 where the ozone is injected into the liquid before the liquid is introduced onto the workpiece.

10. The method of claim 1 wherein the liquid is sprayed onto the workpiece.

19. The method of claim 11 wherein the liquid is sprayed onto the workpiece.

11. A method for removing an anti-reflective film from a surface of a workpiece, comprising in any order the steps of:

placing the workpiece into a process chamber;

rotating the workpiece;

applying a heated liquid including a halogenated additive onto the film on the surface of the workpiece, with the heated liquid forming a layer covering the film;

controlling the thickness of the liquid layer;

introducing ozone gas into the process chamber, with ozone gas diffusing through the liquid layer; and

removing the film from the surface of the workpiece via a chemical reaction between the HF in the water and the ozone.

12. The method of claim 11 wherein the ratio of HF to water ranges from 1:

100 to 1;

1000 parts.

13. The method of claim 11 further including the step of heating the liquid to about 26-200°

C.

14. The method of claim 11 further including the step of heating the workpiece with a heater.

15. The method of claim 11 where the halogenated additive comprises gaseous HF injected into the liquid.

16. The method of claim 11 wherein the film comprises SLAM.

17. The method of claim 11 where the ozone is introduced into the chamber as a dry gas.

18. The method of claim 11 where the ozone is injected into the liquid before the liquid is introduced onto the workpiece.

20. The method of claim 11 wherein the workpiece comprises a silicon wafer and the film comprises an ARC film.

21. The method of claim 11 wherein the workpiece comprises a carbon doped oxide dielectric layer under the an anti-reflective coating or film, and where the anti-reflective coating or film is removed without substantially damaging the doped carbon dielectric oxide layer.

22. A method for removing a film from a surface of a workpiece comprising in any order the steps of:

heating water containing a halogenated additive;

immersing the workpiece into a bath of the heated water;

introducing ozone gas into the heated water; and

removing the film or contaminant from the surface of the workpiece via a chemical reaction between the halogenated additive in the water and the ozone.

23. The method of claim 22 further including the step of bubbling ozone into the water around the workpiece.

24. The method of claim 22 further comprising the step of introducing sonic energy into the bath of water.

25. A system for removing anti-reflective coating from a workpiece, comprising in any order:

a process chamber;

a liquid source with the liquid containing water and a halogenated additive;

a heater for heating the liquid;

a fixture in the process chamber for holding one or more workpieces;

one or more spray nozzles in the chamber for spraying the liquid onto the workpiece.

26. A method for removing a film from a workpiece, comprising:

forming a heated liquid layer on a surface of the workpiece, with the liquid including a halogenated additive;

controlling the thickness of the liquid layer;

contacting the workpiece with steam; and

contacting the workpiece with ozone.