Opposed terminal structure having a nitride semiconductor element

• US 20050035364A1
• Filed: 09/28/2004
• Published: 02/17/2005
• Est. Priority Date: 01/28/2002
• Status: Active Grant

• Current Assignee: Kazumi Kamada, Masahiko Sano, Masashi Yamamoto, Mitsuhiro Nonaka
• Original Assignee: Kazumi Kamada, Masahiko Sano, Masashi Yamamoto, Mitsuhiro Nonaka
• Inventors: Nonaka, Mitsuhiro, Kamada, Kazumi, Yamamoto, Masashi, Sano, Masahiko
• Granted Patent: US 6,946,683 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes

Abstract

An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.

Claims

1. An opposed terminal structure comprising:

a supporting substrate having conductivity;

a nitride semiconductor having a light-emitting layer;

a first terminal formed on one face of the nitride semiconductor; and

a second terminal formed on another face of the nitride semiconductor,

wherein the first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching form one into a plurality of branches.

2. The opposed terminal structure as claimed in claim 1, wherein the second terminal is disposed on at least a portion of the nitride semiconductor that does not oppose the portion of the nitride semiconductor on which the first terminal is formed.

3. The opposed terminal structure as claimed in claim 1, wherein the thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor.

4. The opposed terminal structure as claimed in claim 3, wherein the supporting substrate is formed of nitride semiconductor.

5. The opposed terminal structure as claimed in claim 3, wherein the supporting substrate is made of Cu—

W, Cu—

Mo, AlSiC, AlN, Si, SiC or Cu-diamond.

6. The opposed terminal structure as claimed in claim 1, wherein the nitride semiconductor includes a top layer forming an asperity portion.

7. An opposed terminal structure comprising:

a supporting substrate having conductivity;

a first terminal disposed on one side of the supporting substrate;

a nitride semiconductor having a light-emitting layer; and

a second terminal forming an opposed terminal structure with the first terminal,

wherein the first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching form one into a plurality of branches.

8. The opposed terminal structure as claimed in claim 7, wherein at least a portion of the second terminal does not directly oppose a surface of the first terminal.

9. The opposed terminal structure as claimed in claim 7, wherein the thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor.

10. The opposed terminal structure as claimed in claim 9, wherein the supporting substrate is formed of nitride semiconductor.

11. The opposed terminal structure as claimed in claim 9, wherein the supporting substrate is formed of a material selected from the group consisting of Cu—

W, Cu—

Mo, AlSiC, AlN, Si, SiC and Cu-diamond.

12. The opposed terminal structure as claimed in claim 7, wherein the nitride semiconductor includes a top layer forming an asperity.

13. The opposed terminal structure as claimed in claim 12, wherein the asperity can be formed in one of an island shape, a grid pattern shape, a rectangular shape, or a polygonal shape.