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Device with low-k dielectric in close proximity thereto and its method of fabrication

  • US 20050035455A1
  • Filed: 08/14/2003
  • Published: 02/17/2005
  • Est. Priority Date: 08/14/2003
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a device having a gate electrode overlying the substrate;

    an electrically conductive plug adjacent to the gate electrode and making electrical contact to the device;

    a buffer layer overlying the device and the substrate; and

    a low-k dielectric material disposed in the space between the gate electrode and the electrically conductive plug.

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