Device with low-k dielectric in close proximity thereto and its method of fabrication
First Claim
Patent Images
1. A semiconductor device, comprising:
- a substrate;
a device having a gate electrode overlying the substrate;
an electrically conductive plug adjacent to the gate electrode and making electrical contact to the device;
a buffer layer overlying the device and the substrate; and
a low-k dielectric material disposed in the space between the gate electrode and the electrically conductive plug.
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Abstract
A semiconductor device with a low-k material in close proximity thereto and its fabrication method. The device includes a gate electrode overlying a substrate. An electrically conductive plug is provided immediately adjacent to the gate electrode and making electrical contact to the device. A low-k dielectric material is disposed in the space between the gate electrode and the electrically conductive plug whereby reducing the parasitic capacitance. Thus, higher density of devices can be formed without decreasing operating speed.
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Citations
137 Claims
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1. A semiconductor device, comprising:
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a substrate;
a device having a gate electrode overlying the substrate;
an electrically conductive plug adjacent to the gate electrode and making electrical contact to the device;
a buffer layer overlying the device and the substrate; and
a low-k dielectric material disposed in the space between the gate electrode and the electrically conductive plug. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17, 18, 19, 20, 21, 128)
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5. (Canceled)
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15. (Canceled)
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22. A semiconductor device, comprising:
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a substrate;
a device having a gate electrode overlying the substrate;
a buffer layer overlying the substrate and the device;
a low-k dielectric layer disposed in close proximity to the device and overlying the buffer layer, wherein the low-k dielectric layer and the buffer layer define a contact opening adjacent to the gate electrode; and
an electrically conductive plug embedded in the opening and making electrical contact to the device. - View Dependent Claims (23, 24, 25, 26, 27, 28, 30, 31, 32, 33, 34, 35, 36, 37, 38, 40, 41, 42, 43, 44, 129)
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29. (Canceled)
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39. (Canceled)
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45. A semiconductor device, comprising:
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a substrate;
a device having a gate electrode overlying the substrate and a pair of source/drain regions formed in the substrate oppositely adjacent to the gate electrode, wherein the width of the gate electrode is less than about 1000 Å
;
a buffer layer overlying the device and the substrate;
a blanket low-k dielectric layer overlying the device and the substrate, wherein the low-k dielectric layer and the buffer layer define a contact opening to one of the source/drain regions; and
an electrically conductive plug embedded in the opening and making electrical contact to one of the source/drain regions, wherein the spacing between the electrically conductive plug and the gate electrode is less than about 2000 Å
. - View Dependent Claims (46, 47, 48, 49, 51, 52, 53, 54, 55, 56, 57, 58, 60, 61, 62, 63, 64, 130)
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50. (Canceled)
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59. (Canceled)
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65. A semiconductor device, comprising:
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a substrate;
two closely spaced devices on the substrate, isolated with an isolation element therebetween;
two adjacent electrically conductive plugs disposed between the two closely spaced devices and respectively making electrical contact to each of the devices;
a low-k dielectric material having a dielectric constant less than about 2.8 disposed in the space between the two adjacent contact plugs; and
a buffer layer disposed between the substrate and the low-k dielectric material. - View Dependent Claims (66, 67, 68, 70, 73, 76, 77, 78, 79, 124, 125, 126, 127, 131)
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69. (Canceled)
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71. (Canceled)
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72. (Canceled)
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74-75. -75. (Canceled)
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80. A method of manufacturing a semiconductor device, comprising the steps of:
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providing a device having a gate electrode overlying a substrate;
forming a low-k dielectric layer in close proximity to the device;
forming a contact opening adjacent to the gate electrode through the low-k dielectric layer; and
forming an electrically conductive plug in the opening to make electrical contact to the device. - View Dependent Claims (81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103)
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104. A method of manufacturing a semiconductor device, comprising the steps of:
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providing two closely spaced devices on a substrate, isolated with an isolation element therebetween;
forming a low-k dielectric layer overlying the two closely spaced devices; and
forming two adjacent electrically conductive plugs through the low-k dielectric layer between the two closely spaced devices to respectively make electrical contact to each of the devices. - View Dependent Claims (105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, 121, 122, 123)
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132. A semiconductor device, comprising:
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a substrate;
a device having a gate electrode overlying the substrate;
a low-k dielectric layer having a dielectric constant less than about 2.8 disposed in close proximity to but not contacting the gate electrode, wherein the low-k dielectric layer defines a contact opening adjacent to the gate electrode; and
an electrically conductive plug embedded in the opening and making electrical contact to the device. - View Dependent Claims (133)
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134. A semiconductor device, comprising:
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a substrate;
a device having a pair of source/drain regions formed in the substrate oppositely adjacent to the device;
a low-k dielectric layer having a dielectric constant less than about 2.8 disposed in close proximity to but not contacting the source/drain regions, wherein the low-k dielectric layer defines a contact opening to one of the source/drain regions; and
an electrically conductive plug embedded in the opening and making electrical contact to the device.
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135. A semiconductor device, comprising:
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a substrate;
a device having a gate electrode overlying the substrate;
a low-k dielectric layer having a dielectric constant less than about 2.8 disposed in close proximity to but not contacting the gate electrode at a distance about 20-150 nm therefrom, wherein the low-k dielectric layer defines a contact opening adjacent to the gate electrode; and
an electrically conductive plug embedded in the opening and making electrical contact to the device. - View Dependent Claims (136)
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137. A semiconductor device, comprising:
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a substrate;
a device having a pair of source/drain regions formed in the substrate oppositely adjacent to the device;
substrate oppositely adjacent to the device;
a low-k dielectric layer having a dielectric constant less than about 2.8 disposed in close proximity to but not contacting the source/drain regions at a distance about 20-150 nm therefrom, wherein the low-k dielectric layer defines a contact opening to one of the source/drain regions; and
an electrically conductive plug embedded in the opening and making electrical contact to the device.
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Specification