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Wire bonding method for copper interconnects in semiconductor devices

  • US 20050035466A1
  • Filed: 09/10/2004
  • Published: 02/17/2005
  • Est. Priority Date: 12/20/1999
  • Status: Abandoned Application
First Claim
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1. A wire bonding method, comprising the steps of:

  • forming a semiconductor substrate with a copper (Cu) interconnect material;

    fabricating a copper (Cu) bond pad;

    depositing a tantalum (Ta) layer onto the substrate;

    patterning and etching the tantalum (Ta) layer; and

    bonding an aluminum (Al) wire with the tantalum (Ta) layer;

    wherein a portion of the tantalum (Ta) layer bonds with the copper (Cu) bond pad, and another portion of the tantalum (Ta) layer forms a tantalum aluminide (TaAl3) compound.

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