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Semiconductor memory element, semiconductor memory device and method of fabricating the same

  • US 20050036382A1
  • Filed: 12/16/2003
  • Published: 02/17/2005
  • Est. Priority Date: 12/18/2002
  • Status: Active Grant
First Claim
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1. A semiconductor memory element characterized by comprising a semiconductor activating layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode, wherein the semiconductor memory element is formed over a substrate having an insulating surface;

  • wherein the semiconductor activating layer includes a metal element;

    wherein the channel region is a polycrystal semiconductor film crystallized by being continuously scanned at least in the same channel region in irradiating a laser beam; and

    wherein a grain boundary of a crystal grain constituting the polycrystal semiconductor film is flat or formed with a recessed portion.

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