Stress reduction of sioc low k films

• US 20050037153A1
• Filed: 08/14/2003
• Published: 02/17/2005
• Est. Priority Date: 08/14/2003
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: M'Saad, Hichem, Schmitt, Francimar C.
• Application Number:
  US10/642,081
• Publication Number:
  US 20050037153A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02351 treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC

Abstract

A method for depositing a low dielectric constant film includes providing a gas mixture including one or more cyclic organosiloxanes and one or more inert gases to a substrate in a chamber. In one aspect, the gas mixture further includes one or more oxidizing gases. The ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20. Preferably, the low dielectric constant film has compressive stress.

Claims

1. A method for depositing a low dielectric constant film, comprising:

delivering a gas mixture comprising;

one or more cyclic organosiloxanes; and

one or more inert gases to a substrate in a chamber, wherein a ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20; and

applying RF power to the gas mixture at conditions sufficient to deposit a film on the substrate.

2. The method of claim 1, wherein the film has compressive stress.

3. The method of claim 1, wherein the one or more cyclic organosiloxanes comprises one or more silicon-carbon bonds.

4. The method of claim 3, wherein the one or more cyclic organosiloxanes is octamethylcyclotetrasiloxane (OMCTS).

5. The method of claim 1, wherein one or more cyclic organosiloxanes is selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), 1,3,5,7,9-pentamethylcyclopentasiloxane, hexamethylcyclotrisiloxane, and decamethylcyclopentasiloxane.

6. The method of claim 1, wherein the gas mixture includes essentially no oxidizing gas.

7. The method of claim 1, wherein the one or more inert gases is selected from the group consisting of helium, argon, and combinations thereof.

8. The method of claim 1, further comprising post-treating the low dielectric constant film with an electron beam.

9. The method of claim 1, wherein the chamber has a pressure of about 2 Torr to about 10 Torr.

10. A method for depositing a low dielectric constant film, comprising:

providing a precursor gas mixture consisting of one or more cyclic organosiloxanes and one or more inert gases to a substrate in a chamber, wherein a ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20; and

applying RF power to the gas mixture at conditions sufficient to deposit a film on the substrate, the film having a stress of about 10 Mpa or less.

11. The method of claim 10, further comprising reacting the precursor gas mixture with one or more oxidizing gases selected from the group consisting of oxygen, carbon dioxide, and combinations thereof.

12. The method of claim 10, wherein the one or more cyclic organosiloxanes is octamethylcyclotetrasiloxane (OMCTS).

13. The method of claim 10, wherein the one or more cyclic organosiloxanes is selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), 1,3,5,7,9-pentamethylcyclopentasiloxane, hexamethylcyclotrisiloxane, and decamethylcyclopentasiloxane.

14. The method of claim 10, wherein the one or more inert gases is selected from the group consisting of helium, argon, and combinations thereof.

15. The method of claim 10, wherein the stress is compressive.

16. The method of claim 10, wherein the chamber has a pressure of about 2 Torr to about 10 Torr.

17. A method for depositing a low dielectric constant film, comprising:

providing a gas mixture comprising;

one or more cyclic organosiloxanes;

one or more inert gases; and

one or more oxidizing gases to a substrate in a chamber, wherein a ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20; and

applying RF power to the gas mixture at conditions sufficient to deposit a film on the substrate, wherein the conditions include a chamber pressure of about 2 Torr to about 10 Torr.

18. The method of claim 17, wherein the one or more oxidizing gases is selected from the group consisting of oxygen, carbon dioxide, and combinations thereof.

19. The method of claim 17, wherein the one or more inert gases is selected from the group consisting of helium, argon, and combinations thereof.

20. The method of claim 17, wherein the film has compressive stress.