Method for forming thin film
First Claim
1. A method for forming a thin film comprising:
- (a) supplying a first source gas to a reactor loaded with a substrate in which reactor a reaction for forming said thin film takes place, (b) stopping supply of said first source gas and purging said first source gas remaining in said reactor, (c) supplying a second source gas to said reactor, wherein radio frequency (RF) electric power is applied during the supply period of said second source gas to activate said second source gas, and (d) turning said RF electric power off and stopping the supply of said second source gas, wherein a purge gas is continuously supplied while the steps (a) through (d) are processed to form said thin film.
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Accused Products
Abstract
Method for forming a thin film at low temperature by using plasma pulses is disclosed. While a purge gas or a reactant purge gas activated by plasma is continuously supplied into a reactor, a source gas is supplied intermittently into the reactor during which period plasma is generated in the reactor so that the source gas and the purge gas activated by plasma reacts, so that a thin film is formed according to the method. Also, a method for forming a thin layer of film containing a plural of metallic elements, a method for forming a thin metallic film containing varied contents by amount of the metallic elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , and a method for forming a thin film containing continuously varying compositions of the constituent elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , are disclosed. The methods for forming thin films disclosed here allows to shorten the purge cycle duration even if the reactivity between the source gases is high, to reduce the contaminants caused by the gas remaining in the reactor, to form a thin film at low temperature even if the reactivity between the source gases is low, and also to increase the rate of thin film formation.
493 Citations
22 Claims
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1. A method for forming a thin film comprising:
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(a) supplying a first source gas to a reactor loaded with a substrate in which reactor a reaction for forming said thin film takes place, (b) stopping supply of said first source gas and purging said first source gas remaining in said reactor, (c) supplying a second source gas to said reactor, wherein radio frequency (RF) electric power is applied during the supply period of said second source gas to activate said second source gas, and (d) turning said RF electric power off and stopping the supply of said second source gas, wherein a purge gas is continuously supplied while the steps (a) through (d) are processed to form said thin film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for forming a thin film, while supplying a reactant purge gas continuously into a reactor loaded with a substrate, comprising:
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(A) supplying a source gas to a reactor loaded with a substrate, (B) stopping supply of said source gas and purging said source gas remaining in said reactor;
(C) turning on the RF electric power to activate said reactant purge gas; and
(D) turning off said RF electric power, wherein said reactant purge gas is continuously supplied into said reactor loaded with a substrate, in which reactor a reaction for forming a thin film takes place while processing the steps (A) through (D). - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification