Transition metal alloys for use as a gate electrode and devices incorporating these alloys
First Claim
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1. An alloy comprising:
- approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium;
approximately 30 to 60 atomic percent of carbon; and
up to approximately 20 atomic percent of aluminum.
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Abstract
Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.
136 Citations
45 Claims
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1. An alloy comprising:
- approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium;
approximately 30 to 60 atomic percent of carbon; and
up to approximately 20 atomic percent of aluminum. - View Dependent Claims (2, 3, 4)
- approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium;
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5. An alloy comprising:
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approximately 20 to 50 atomic percent of a transition metal;
approximately 30 to 60 atomic percent of a combination of one or more elements, the combination of elements including at least one of carbon, nitrogen, silicon, germanium, and boron; and
up to approximately 20 atomic percent of a dopant. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. An alloy comprising:
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approximately 37 atomic percent of titanium;
approximately 55 atomic percent of carbon; and
approximately 3 atomic percent of aluminum;
wherein the alloy has a work function of between approximately 3.8 eV and 4.4 eV. - View Dependent Claims (13, 14)
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15. A device comprising:
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a substrate having a source region and a drain region formed therein;
an insulating layer disposed on the substrate and extending between the source and drain regions; and
a gate electrode overlying the insulating layer, the gate electrode formed of an alloy including approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium, approximately 30 to 60 atomic percent of carbon, and up to approximately 20 atomic percent of aluminum - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A device comprising:
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a substrate having a source region and a drain region formed therein;
an insulating layer disposed on the substrate and extending between the source and drain regions; and
a gate electrode overlying the insulating layer, the gate electrode formed of an alloy including approximately 20 to 50 atomic percent of a transition metal, approximately 30 to 60 atomic percent of a combination of one or more elements, the combination of elements including at least one of carbon, nitrogen, silicon, germanium, and boron, and up to approximately 20 atomic percent of a dopant. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A method comprising:
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depositing a layer of insulating material on a substrate; and
depositing a layer of an alloy over the insulating layer, the alloy including approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium, approximately 30 to 60 atomic percent of carbon, and up to approximately 20 atomic percent of aluminum. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification