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Tilted cavity semiconductor optoelectronic device and method of making same

  • US 20050040410A1
  • Filed: 09/16/2004
  • Published: 02/24/2005
  • Est. Priority Date: 02/12/2002
  • Status: Abandoned Application
First Claim
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1. A semiconductor wavelength-selective tilted cavity light-emitting diode comprising:

  • a) a substrate;

    b) a top coating;

    c) a cavity comprising a p-n junction element and located between the top coating and the substrate wherein the p-n junction element is an active element which generates light when a forward bias is applied; and

    d) a bottom mirror located between the cavity and the substrate;

    wherein a direction of propagation of light within the p-n junction element and a direction normal to a plane of the p-n junction form a tilt angle; and

    wherein the cavity, the bottom mirror, and the top coating are designed such that a transmission of generated optical power within a spectral range and within an interval of tilt angles through the bottom mirror to the substrate is minimized, and the transmission of generated optical power through the top coating within the same or a broader spectral range and within the same interval of tilt angles is optimized to achieve a required output power level.

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