Tilted cavity semiconductor optoelectronic device and method of making same
First Claim
1. A semiconductor wavelength-selective tilted cavity light-emitting diode comprising:
- a) a substrate;
b) a top coating;
c) a cavity comprising a p-n junction element and located between the top coating and the substrate wherein the p-n junction element is an active element which generates light when a forward bias is applied; and
d) a bottom mirror located between the cavity and the substrate;
wherein a direction of propagation of light within the p-n junction element and a direction normal to a plane of the p-n junction form a tilt angle; and
wherein the cavity, the bottom mirror, and the top coating are designed such that a transmission of generated optical power within a spectral range and within an interval of tilt angles through the bottom mirror to the substrate is minimized, and the transmission of generated optical power through the top coating within the same or a broader spectral range and within the same interval of tilt angles is optimized to achieve a required output power level.
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Abstract
A novel class of semiconductor light-emitting devices, or “tilted cavity light-emitting devices” is disclosed. The device includes at least one active element, generally placed within a cavity, with an active region generating an optical gain by injection of a current and two mirrors. The device generates optical modes that propagate in directions, which are tilted with respect to both the p-n junction plane and the direction normal to this plane. A light-emitting diode is also disclosed, where the cavity and the mirrors are designed such that transmission of generated optical power within a certain spectral range and within a certain interval of angles to the substrate is minimized. Transmission of optical power within a certain spectral range, which corresponds to the emission range of the light-emitting active medium and within a certain interval of angles out of the device, is optimized to achieve a required output power level.
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Citations
131 Claims
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1. A semiconductor wavelength-selective tilted cavity light-emitting diode comprising:
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a) a substrate;
b) a top coating;
c) a cavity comprising a p-n junction element and located between the top coating and the substrate wherein the p-n junction element is an active element which generates light when a forward bias is applied; and
d) a bottom mirror located between the cavity and the substrate;
wherein a direction of propagation of light within the p-n junction element and a direction normal to a plane of the p-n junction form a tilt angle; and
wherein the cavity, the bottom mirror, and the top coating are designed such that a transmission of generated optical power within a spectral range and within an interval of tilt angles through the bottom mirror to the substrate is minimized, and the transmission of generated optical power through the top coating within the same or a broader spectral range and within the same interval of tilt angles is optimized to achieve a required output power level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 130, 131)
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51. A light-emitting system comprising:
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a) a phosphorous-containing medium;
b) an external mirror; and
c) a semiconductor tilted cavity light-emitting diode comprising;
i) a substrate;
ii) a top coating;
iii) a cavity comprising a p-n junction element and located between the top coating and the substrate wherein the p-n junction element is an active element which generates light when a forward bias is applied; and
iv) a bottom mirror located between the cavity and the substrate;
wherein a direction of propagation of light within the p-n junction element and a direction normal to the plane of the p-n junction form a tilt angle;
wherein the diode is designed to emit light in an ultraviolet spectral region;
wherein the phosphorous-containing medium, which is located between the diode and the external mirror, partially absorbs light in the ultraviolet spectral region, and emits visible light due to photoluminescence; and
wherein the external mirror is semi-transparent to visible light and is non-transparent to light in the ultraviolet spectral region. - View Dependent Claims (52, 53, 54, 55, 56, 57, 58, 59)
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60. A light-emitting system comprising:
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a) an external mirror; and
b) a tilted cavity semiconductor laser comprising;
i) a substrate;
ii) a bottom mirror contiguous with the substrate wherein the bottom mirror is a multilayered interference reflector;
iii) a cavity comprising a p-n junction element and contiguous with the bottom mirror on a side opposite the substrate wherein the p-n junction element is an active element which generates light when a forward bias is applied; and
iv) a top mirror contiguous with the cavity from a side opposite to the bottom mirror wherein the top mirror is a multilayered interference reflector;
wherein a direction of propagation of light within the p-n junction element and a direction normal to the junction plane forms a tilt angle. - View Dependent Claims (61)
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62. A semiconductor tilted cavity laser comprising:
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a) a substrate;
b) a top mirror;
c) a cavity comprising a p-n junction element and located between the top mirror and the substrate wherein the p-n junction element is an active element which generates light when a forward bias is applied;
d) a bottom mirror located between the cavity and the substrate;
e) a front facet obtained by cleavage or etching of the substrate, the bottom mirror, the cavity and the top mirror; and
f) a rear facet obtained by cleavage or etching of the substrate, the bottom mirror, the cavity, and the top mirror;
wherein the front facet or the rear facet is tilted with respect to a substrate surface at a tilt angle not equal to 90°
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wherein a direction of propagation of light within the p-n junction element and the direction normal to the junction plane forms a tilt angle. - View Dependent Claims (63, 64, 65, 66, 67)
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68. A mode-locked tilted cavity laser comprising:
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a) a substrate;
b) a bottom multilayered interference reflector contiguous with the substrate;
c) a cavity comprising at least one p-n junction element and contiguous with the bottom multilayered interference reflector on a side opposite the substrate wherein the p-n junction element comprises at least a first element section and a second element section, wherein the first element section includes an active element which generates light when a forward bias is applied and the second element section includes an absorber which absorbs light when a reverse bias is applied;
d) a top multilayered interference reflector contiguous with the cavity on a side opposite the bottom multilayered interference reflector, wherein the top multilayered interference reflector is partially etched such that it comprises a first top reflector section and a second top reflector section;
e) a first p-contact mounted on the first top reflector section on a side opposite the cavity;
f) a second p-contact mounted on the second top reflector section on a side opposite the cavity; and
g) an n-contact mounted on the substrate on a side opposite the bottom multilayered interference reflector;
wherein a direction of propagation of light within the p-n junction element and the direction normal to the junction plane forms a tilt angle;
wherein a forward bias is applied between the first p-contact and the n-contact; and
wherein a reverse bias is applied between the second p-contact and the n-contact. - View Dependent Claims (69, 70)
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71. A mode-locked tilted cavity laser comprising:
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a) a substrate;
b) a first multilayered interference reflector contiguous with the substrate;
c) an absorbing element contiguous with the first multilayered interference reflector on a side opposite the substrate;
d) a second multilayer intereference reflector contiguous with the absorbing element on a side opposite the first multilayered interference reflector;
e) a cavity contiguous with the second multilayered interference reflector on a side opposite the absorbing element;
f) a third multilayered interference reflector contiguous with the cavity on a side opposite the second multilayered interference reflector;
g) a first contact contiguous with the substrate on a side opposite the first multilayered interference reflector;
h) a second contact mounted as an intracavity contact and contiguous with the absorbing element on a side opposite the first multilayered interference reflector;
i) a third contact placed with respect to the third multilayered interference reflector on a side opposite the cavity;
j) a first p-n junction element placed within the absorbing element;
k) at least one second p-n junction element placed within an element selected from the group consisting of;
i) the second multilayered interference reflector;
ii) the cavity;
iii) the third multilayered interference reflector; and
iv) any combination of i) through iii);
l) a first bias element between the first contact and the second contact providing a reverse bias at the first p-n junction element; and
m) a second bias element between the second contact and the third contact providing a forward bias at the first p-n junction element;
wherein a direction of propagation of light within the p-n junction element and the direction normal to the junction plane forms a tilt angle. - View Dependent Claims (72, 73, 74)
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75. A mode-locked tilted cavity laser comprising:
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a) a substrate;
b) a bottom multilayered interference reflector contiguous with the substrate;
c) a cavity contiguous with the bottom multilayered interference reflector on a side opposite the substrate;
d) a top multilayered interference reflector contiguous with the cavity on a side opposite the bottom multilayered interference reflector;
e) an absorbing element contiguous with the top multilayered interference reflector on a side opposite the cavity;
f) a bottom contact contiguous with the substrate on a side opposite the bottom multilayered interference reflector;
g) a top contact contiguous with the absorbing element on a side opposite the top multilayered interference reflector;
h) at least one p-n junction element placed within an element selected from the group consisting of;
i) the bottom multilayered interference reflector;
ii) the cavity;
iii) a top multilayered interference reflector; and
iv) any combination of i) through iii) above;
i) a bias element between the bottom contact and the top contact that provides a forward bias to a p-n junction within the p-n junction element;
wherein the absorbing element comprises a high density of defects which enable non-radiative recombination of electron-hole pairs and is selected from the group consisting of;
i) a metamorphic layer obtained via lattice-mismatched growth and containing a high density of extended or point defects;
ii) a layer containing dislocated quantum dots;
iii) a layer containing dislocated quantum wires;
iv) a layer grown at a low temperature;
v) a layer containing metallic precipitates; and
vi) any combination of i) through v).
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76. A mode-locked tilted cavity laser comprising:
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a) a substrate;
b) a bottom multilayered interference reflector contiguous with the substrate;
c) a cavity comprising at least one p-n junction element and contiguous with the bottom multilayered interference reflector on a side opposite the substrate wherein the p-n junction element comprises;
i) a first element section including an active element which generates light when a forward bias is applied; and
ii) a second element section including an absorber which absorbs light when a reverse bias is applied;
d) a top multilayered interference reflector contiguous with the cavity on a side opposite the bottom multilayered interference reflector, wherein the top multilayered interference reflector is partially etched such that it comprises a first top reflector section and a second top reflector section;
wherein a direction of propagation of light within the p-n junction element and a direction normal to the junction plane forms a tilt angle;
e) a first p-contact mounted on the first top reflector section on a side opposite the cavity;
f) a second p-contact mounted on the second top reflector section on a side opposite the cavity; and
g) an n-contact mounted on the substrate on a side opposite the bottom multilayered interference reflector;
wherein a forward bias is applied between the first p-contact and the n-contact; and
wherein a reverse bias is applied between the second p-contact and the n-contact. - View Dependent Claims (77, 78)
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79. A mode-locked tilted cavity laser comprising:
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a) a substrate;
b) a first multilayered interference reflector contiguous with the substrate;
c) an absorbing element contiguous with the first multilayered interference reflector on a side opposite the substrate;
d) a second multilayer intereference reflector contiguous with the absorbing element on a side opposite the first multilayered interference reflector;
e) a cavity contiguous with the second multilayered interference reflector on a side opposite the absorbing element;
f) a third multilayered interference reflector contiguous with the cavity on a side opposite the second multilayered interference reflector;
g) a first contact contiguous with the substrate on a side opposite the first multilayered interference reflector;
h) a second contact mounted as an intracavity contact and contiguous with the absorbing element on a side opposite the first multilayered interference reflector;
i) a third contact placed with respect to the third multilayered interference reflector on a side opposite the cavity;
j) a first p-n junction element placed within the absorbing element;
k) a second p-n junction element placed within an element selected from the group consisting of;
i) the second multilayered interference reflector;
ii) the cavity;
iii) the third multilayered interference reflector; and
iv) any combination of i) through iii);
l) a first bias element between the first contact and the second contact, which provides a reverse bias at the first p-n junction element; and
m) a second bias element between the second contact and the third contact, which provides a forward bias at the first p-n junction element;
wherein a direction of propagation of light within the p-n junction element and the direction normal to the junction plane forms a tilt angle. - View Dependent Claims (80, 81)
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82. A semiconductor tilted cavity optoelectronic device comprising:
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a) a substrate;
b) a cavity;
c) at least one multilayered interference reflector contiguous with the cavity; and
d) at least one p-n junction element wherein a direction of propagation of light within the p-n junction element and a direction normal to the junction plane forms a tilt angle;
wherein the cavity and the multilayered interference reflector are designed such that a reflectivity dip of the cavity and a reflectivity maximum of the multilayered interference reflector coincide at an optimum tilt angle, and draw apart as the angle changes. - View Dependent Claims (83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127)
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128. A method of fine tuning a resonant wavelength of a semiconductor tilted cavity optoelectronic device comprising a substrate, a cavity, at least one multilayered interference reflector contiguous with the cavity, and at least one p-n junction element wherein a direction of propagation of light within the p-n junction element and a direction normal to the junction plane forms a tilt angle, wherein the cavity and the multilayered interference reflector are designed such that a reflectivity dip of the cavity and a reflectivity maximum of the multilayered interference reflector coincide at an optimum tilt angle, and draw apart as the angle changes, and wherein a design is optimized such that the leaky losses of the tilted optical mode to the substrate and at least one of the contact layers is at a minimum at a certain wavelength of light and increases away from this wavelength thus providing wavelength-selective leaky losses of the tilted optical modes such that the semiconductor tilted cavity optoelectronic device is wavelength-stabilized, the method comprising the steps of:
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a) epitaxially growing an epitaxial structure;
b) fabricating the tilted cavity optoelectronic device;
c) measuring the resonant wavelength of the fabricated optoelectronic device;
d) calculating a necessary thickness of an additional dielectric layer based on the measured resonant wavelength and on a required resonant wavelength; and
e) depositing the dielectric layer of the thickness calculated in step d) on top of the optoelectronic device.
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129. A semiconductor tilted cavity laser comprising:
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a) a substrate;
b) a top mirror;
c) a cavity comprising a p-n junction element and located between the top mirror and the substrate wherein the p-n junction element is an active element which generates light when a forward bias is applied;
d) a bottom mirror located between the cavity and the substrate;
e) a front facet formed by cleavage or etching the substrate, the bottom mirror, the cavity, and the top mirror;
f) a rear facet formed by cleavage or etching the substrate, the bottom mirror, the cavity, and the top mirror; and
g) a top contact, wherein a direction of a stripe forming the top contact is tilted in a lateral plane and is rotated such that an angle between the stripe and the facets is different than 90 degrees;
wherein a direction of propagation of light within the p-n junction element and the direction normal to the junction plane forms a tilt angle in a a vertical plane; and
wherein feedback exists only for an optical mode which is additionally tilted in the lateral plane with respect to the direction of the stripe.
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Specification