Semiconductor light emitting device and method for manufacturing same

• US 20050040427A1
• Filed: 09/30/2004
• Published: 02/24/2005
• Est. Priority Date: 03/10/2000
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Abe, Hirohisa, Sugawara, Hideto, Idei, Yasuo, Konno, Kuniaki, Nitta, Koichi
• Granted Patent: US 7,141,445 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

Claims

1-17. -17. (canceled)

18. A method for manufacturing a semiconductor light emitting device, said method comprising:

a semiconductor light emitting element forming on a first substrate step including a step of forming a semiconductor layers, which has an active layer for emitting primary light having a first wavelength by current injection;

a semiconductor laminate forming step including a step of forming on a second substrate a semiconductor layer, which includes a light emitting layer excited by said primary light for emitting secondary light having a second wavelength different from said first wavelength; and

a bonding step including a step of integrally bonding said semiconductor light emitting element to said semiconductor laminate.

19. A method for manufacturing a semiconductor light emitting device as set forth in claim 18, wherein said active layer is an In_p Ga_q Al₁₋

p−

q N(0≦

p≦

1, 0≦

q≦

1, 0≦

p+q≦

1) active layer, and said light emitting layer is an In_b Ga_c Al<sub>1−

b−

c</sub> P (0≦

b≦

1, 0≦

c≦

1, 0≦

b+c≦

1) light emitting layer.

20. A method for manufacturing a semiconductor light emitting device as set forth in claim 19, wherein said semiconductor light emitting element forming step comprises the steps of:

forming a buffer layer on said first substrate;

forming a first conductive type In_r Ga_sAl<sub>1−

r−

s</sub>N(0≦

r≦

1, 0≦

s≦

1, 0≦

r+s≦

1) cladding layer on said buffer layer;

forming said active layer on said first conductive type In_rGa_sAl<sub>1−

r−

s</sub>N(0≦

r≦

1, 0≦

s≦

1, 0≦

r+s≦

1) cladding layer; and

forming a second conductive type In_tGa_uAl<sub>1−

t−

u</sub>N(0≦

t≦

1, 0≦

u≦

1, 0≦

t+u≦

1) cladding layer on said active layer,

said semiconductor laminate forming step comprising the steps of forming said light emitting layer on said second substrate, and forming an In_dGa_eAl<sub>1−

d−

e</sub>P (0≦

d≦

1, 0≦

e≦

1, 0≦

d+e≦

1) cladding layer on said light emitting layer,

said bonding step comprising a step of integrally bonding said semiconductor light emitting element to said In_dGa_eAl<sub>1−

d−

e</sub>p cladding layer of said semiconductor laminate.

21. A method for manufacturing a semiconductor light emitting device as set forth in claim 20, wherein said light emitting layer is a light emitting layer of an InAlP/InGaAlP multilayer film, and which further comprises, after said bonding step, a second substrate removing step including a step of removing said second substrate to expose said light emitting layer, and a protection layer forming step including a step of forming a protection layer on said light emitting layer exposed by said second substrate removing step.

22. A method for manufacturing a semiconductor light emitting device as set forth in claim 20, wherein said light emitting layer is a light emitting layer of an InAlP/InGaAlP multilayer film, and which further comprises, after said bonding step, a second substrate removing step including a step of removing said second substrate to expose said light emitting layer, and a third substrate bonding step including a step of a bonding third substrate, which has the property of transmitting said primary light emitted from said active layer and said secondary light emitted from said light emitting layer, to said light emitting layer exposed in said second substrate removing step.

27. A method for manufacturing a semiconductor light emitting device as set forth in claim 20, wherein said semiconductor laminate forming step comprises the steps of:

forming a In_dGa_eAl<sub>1−

d−

e</sub>P (0≦

d≦

1, 0≦

e≦

1, 0≦

d+e≦

1) cladding layer on a GaAs substrate serving as said second substrate;

forming said light emitting layer on said In_dGa_eAl<sub>1−

d−

e</sub>p cladding layer; and

forming a In_fGa_hAl<sub>1−

f−

h</sub>P (0≦

f≦

1, 0≦

h≦

1, 0≦

f+h≦

1) cladding layer on said light emitting layer,

said method further comprising, after said bonding step, a GaAs substrate removing step of removing said GaAs substrate to expose said In_dGa_eAl<sub>1−

d−

e</sub>P cladding layer.

23. A method for manufacturing a semiconductor light emitting device, said method comprising the steps of:

forming on a GaAs substrate an In_bGa_cAl<sub>1−

b−

c</sub>P (0≦

b≦

1, 0≦

c≦

1, 0≦

b+c≦

1) light emitting layer, which is excited by blue light for emitting yellow light;

forming a buffer layer on said In_bGa_cAl<sub>1−

b−

c</sub>P light emitting layer; and

forming on said buffer layer a Zn_jCd<sub>1−

j</sub>Se (0≦

j≦

1) active layer, which emits said blue light by current injection.

24-26. -26. (canceled)

28-29. -29. (canceled)