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Strained-channel fin field effect transistor (FET) with a uniform channel thickness and separate gates

  • US 20050040444A1
  • Filed: 08/22/2003
  • Published: 02/24/2005
  • Est. Priority Date: 08/22/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a strained-silicon channel formed adjacent a source and a drain;

    a first gate formed over a first side of said channel;

    a second gate formed over a second side of said channel;

    a first gate dielectric formed between said first gate and said strained-silicon channel; and

    a second gate dielectric formed between said second gate and said strained-silicon channel, wherein said strained-silicon channel is non-planar.

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