Vacuum package fabrication of integrated circuit components

• US 20050042839A1
• Filed: 10/18/2004
• Published: 02/24/2005
• Est. Priority Date: 05/02/2003
• Status: Active Grant

• Current Assignee: L-3 Communications Corporation (L3Harris Technologies, Inc.)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Gooch, Roland W., Syllaios, Athanasios J., Schimert, Thomas R.
• Granted Patent: US 7,015,074 B2
• Time in Patent Office: Days
• US Class Current: 438/456
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate

Abstract

A method for manufacturing integrated circuit device lids includes creating a lid cavity on the surface of a lid wafer, forming a sealing surface on the lid wafer that surrounds the lid cavity, and forming a trench on the lid wafer between the lid cavity and the sealing surface. The resulting structure uptakes excess sealing surface material and prevents such material from entering the lid cavity.

Claims

1. A method for manufacturing an integrated circuit device lid, comprising the steps of:

forming one or more a lid cavities on the surface of a lid wafer;

forming one or more sealing surfaces on the lid wafer disposed around the cavity; and

forming one or more trenches in the lid wafer, wherein each trench is disposed between one of the sealing surfaces and one of the lid cavities.

2. The method of claim 1, wherein the one or more lid cavities are formed by wet or dry isotropic etching.

3. The method of claim 1, wherein the step of forming one or more lid cavities comprises forming a plurality of lid cavities on the surface of the lid wafer.

4. The method of claim 3, wherein the step of forming one or more sealing surfaces comprises forming a plurality of sealing surfaces on the surface of the lid wafer, each sealing surface disposed around one of the plurality of lid cavities.

5. The method of claim 4, wherein the step of forming one or more trenches comprises forming a plurality of trenches, each trench disposed between one of the sealing surfaces and one of the lid cavities.

6. The method of claim 1, wherein the one or more trenches are formed by isotropic wet or dry etching.

7. The method of claim 1, wherein the one or more trenches are formed by anisotropic etching.

8. The method of claim 1, wherein the steps of forming one or more lid cavities and one or more sealing surfaces disposed around the cavity comprise bonding a window wafer to the lid wafer, wherein the window wafer is preformed with one or more cavities and one or more sealing surfaces.

9. The method of claim 1, wherein the one or more trenches are each formed with a depth and width that are approximately equal.

10. The method of claim 1, wherein the depth of each of the one or more trenches is determined by the width of a surface opening of the trench.