Redundant memory structure using bad bit pointers

• US 20050044459A1
• Filed: 10/08/2004
• Published: 02/24/2005
• Est. Priority Date: 03/28/2003
• Status: Active Grant

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk 3D LLC (Western Digital Corporation)
• Inventors: Scheuerlein, Roy E., Johnson, Mark G., Bosch, Derek J., Ilkbahar, Alper, Tringali, J. James
• Granted Patent: US 6,996,017 B2
• Time in Patent Office: Days
• US Class Current: 714/719
• CPC Class Codes: G11C 29/44 Indication or identification of errors, e.g. for repair
• CPC Class Codes: G11C 29/4401 for self repair
• CPC Class Codes: G11C 29/76 using address translation or modifications
• CPC Class Codes: G11C 29/78 using programmable devices
• CPC Class Codes: G11C 7/1006 Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
• CPC Class Codes: G11C 7/24 Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Abstract

The preferred embodiments described herein relate to a redundant memory structure using bad bit pointers. In one preferred embodiment, data is written in a first plurality of memory cells, and an error is detected in writing data in one of the memory cells. In response to the detected error, a pointer is written in a second plurality of memory cells, the pointer identifying which memory cell in the first plurality of memory cells contains the error. During a read operation, the data is read from the first plurality of memory cells, and the pointer is read from the second plurality of memory cells. From the pointer, the memory cell containing the error is identified, and the error is corrected. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.

Claims

1. A memory device comprising:

a memory array;

a plurality of memory cells;

circuitry operative to;

detect an error in writing data in a memory cell of the memory array;

write a pointer in the plurality of memory cells, the pointer identifying which memory cell in the memory array contains the error;

read the data from the memory array;

read the pointer from the plurality of memory cells;

from the pointer, identify which memory cell in the memory array contains the error; and

correct the error.

2. The memory device of claim 1 further comprising a buffer operative to store the data before it is written in the memory array and after it is read from the memory array.

3. The memory device of claim 1, wherein the memory array comprises write-once memory cells.

4. The memory device of claim 1, wherein the memory array comprises anti-fuse memory cells.

5. The memory device of claim 1, wherein the memory array comprises memory cells arranged in a plurality of layers stacked vertically above one another in a single integrated circuit.

6. The memory device of claim 1 further comprising a buffer and ECC circuitry between the memory array and the buffer.

7. The memory device of claim 1 further comprising input/output pads, a buffer, and ECC circuitry between the input/output pads and the buffer.

8. The memory device of claim 1 further comprising row redundancy circuitry in communication with the memory array.

9. The method of claim 8, wherein the row redundancy circuitry comprises a leakage current detector.

10. The memory device of claim 1 further comprising column redundancy circuitry in communication with the memory array.

11. The memory device of claim 1, wherein the plurality of memory cells is part of a second memory array.

12. The memory device of claim 1, wherein the plurality of memory cells is part of the memory array.

13. The memory device of claim 12, wherein the memory array comprises a plurality of sub-arrays, and wherein the pointer and the data are written in the same sub-array.

14. The memory device of claim 12, wherein the memory array comprises a plurality of sub-arrays, and wherein the pointer and the data are written in different sub-arrays.

31. The memory device of claim 1, wherein the memory array comprises write-many, non-volatile memory cells.

15. A memory device comprising:

a memory array comprising a plurality of sub-arrays, wherein at least one sub-array comprises a plurality of pointers identifying which memory cells in the memory array are bad and further identifying a respective plurality of correct bits for those bad memory cells;

a content addressable memory array operative to compare an address with the identifying information stored in the plurality of pointers; and

circuitry operative to, if the content addressable memory array determines a match exists between the address and the identifying information, replace the bit at the address with the correct bit specified in the pointer.

16. The memory device of claim 15, wherein the memory array comprises write-once memory cells.

17. The memory device of claim 15, wherein the memory array comprises anti-fuse memory cells.

18. The memory device of claim 15, wherein the memory array comprises memory cells arranged in a plurality of layers stacked vertically above one another in a single integrated circuit.

19. The memory device of claim 15 further comprising ECC circuitry in communication with the memory array.

20. The memory device of claim 15 further comprising row redundancy circuitry in communication with the memory array.

21. The memory device of claim 15 further comprising column redundancy circuitry in communication with the memory array.

32. The memory device of claim 15, wherein the memory array comprises write-many, non-volatile memory cells.

22. A memory device comprising:

a memory array comprising a plurality of primary rows of memory cells and a plurality of redundant rows of memory cells;

a leakage current detector operative to detect an error in a primary row of the memory array; and

circuitry operative to replace a primary row of memory cells with a redundant row of memory cells in response to the leakage current detector detecting an error in the primary row of memory cells.

23. The memory device of claim 22 further comprising circuitry operative to bias column lines of the memory array at a same voltage as a row line comprising the primary row of memory cells being tested by the leakage current detector.

24. The memory device of claim 22 further comprising circuitry operative to bias a row line comprising the primary row of memory cells being tested by the leakage current detector at a same bias as an unselected row line.

25. The memory device of claim 22 further comprising circuitry operative to write a flag in the memory device indicating that the redundant row of memory cells should be used instead of the primary row of memory cells.

26. The memory device of claim 22 further comprising circuitry operative to:

detect an error in writing data in a memory cell of the memory array;

write a pointer in a plurality of memory cells of the memory device, the pointer identifying which memory cell in the memory array contains the error;

read the data from the memory array;

read the pointer from the plurality of memory cells;

from the pointer, identify which memory cell in the memory array contains the error; and

correct the error.

27. The memory device of claim 22, wherein the memory array comprises write-once memory cells.

28. The memory device of claim 22, wherein the memory array comprises anti-fuse memory cells.

29. The memory device of claim 22, wherein the memory array comprises memory cells arranged in a plurality of layers stacked vertically above one another in a single integrated circuit.

30. The memory device of claim 22 further comprising ECC circuitry in communication with the memory array.

33. The memory device of claim 22, wherein the memory array comprises write-many, non-volatile memory cells.