Methods for distributed electrode injection and systems thereof

• US 20050044955A1
• Filed: 08/24/2004
• Published: 03/03/2005
• Est. Priority Date: 08/29/2003
• Status: Active Grant

• Current Assignee: Rochester Institute of Technology
• Original Assignee: Rochester Institute of Technology
• Inventors: Potter, Michael D.
• Granted Patent: US 7,287,328 B2
• Time in Patent Office: Days
• US Class Current: 73/514.320
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/3115 Doping the insulating layers
• CPC Class Codes: Y10T 29/49098 Applying terminal
• CPC Class Codes: Y10T 29/49147 Assembling terminal to base
• CPC Class Codes: Y10T 29/49226 Electret making
• CPC Class Codes: Y10T 29/53204 Electrode

Abstract

A method and system for injecting charge includes providing a target comprising a first layer on a second layer, coupling a conductive base to the second layer, and providing a medium which is in contact with at least a portion of the first layer. An electrode is positioned to face and is spaced from the first layer and is at least partially in contact with the medium. An electric field is provided across the first and second layers to inject charge to an interface between the first layer and the second layer.

Claims

1. A method for injecting charge, the method comprising:

providing a target comprising a first layer on a second layer;

coupling a conductive base to the second layer;

providing a medium which is in contact with at least a portion of the first layer;

positioning an electrode which faces and is spaced from the first layer, wherein the electrode is at least partially in contact with the medium; and

providing an electric field across the first and second layers to inject charge to an interface between the first layer and the second layer.

2. The method as set forth in claim 1 further comprising:

providing a housing which defines a chamber, the conductive base is adjacent to an opening to the chamber;

filling at least a portion of the chamber with the medium, wherein at least a portion of the target is substantially covered by the medium; and

disposing the electrode at least partially in the medium in the chamber on an opposing side of the target from the conductive base.

3. The method as set forth in claim 2 wherein the housing is made of a non-conducting material.

4. The method as set forth in claim 2 further comprising securing the opening of the chamber of the housing against a portion of the first layer.

5. The method as set forth in claim 4 further comprising sealing the opening of the chamber against the portion of the first layer.

6. The method as set forth in claim 2 wherein the conductive base is secured across the opening to the chamber in the housing.

7. The method as set forth in claim 1 wherein the medium has a conductivity between about 1×

10<sup>−

4</sup> and 1×

10<sup>−

10</sup> siemens.

8. The method as set forth in claim 1 wherein the medium is one of a fluid and a solid.

9. The method as set forth in claim 1 wherein the first and second layers are dissimilar insulators.

10. The method as set forth in claim 1 wherein the target further comprises a third layer on first layer.

11. The method as set forth in claim 10 further comprising removing a portion of the third layer to expose a portion of the first layer under the removed portion of the third layer, wherein the remaining portion of the third layer substantially prevents the injection of the charge to a portion of the interface between the first layer and the second layer covered by the remaining portion of the third layer.

12. The method as set forth in claim 10 wherein the first layer comprises silicon nitride, the second layer comprises silicon dioxide, and the third layer comprises silicon dioxide.

13. The method as set forth in claim 10 wherein the target further comprises a substrate on the second layer.

14. The method as set forth in claim 1 further comprising a third layer on the second layer.

15. The method as set forth in claim 14 wherein the first layer comprises silicon dioxide, the second layer comprises silicon nitride, and the third layer comprises silicon dioxide.

16. The method as set forth in claim 14 wherein the target further comprises a substrate on the third layer.

17. The method as set forth in claim 1 wherein the charge trapped at the interface is monopole charge.

18. A system for injecting charge, the system comprising:

a target comprising a first layer on a second layer

a conductive base to the second layer;

a medium which is in contact with at least a portion of the first layer;

an electrode which faces and is spaced from the first layer, wherein the electrode is at least partially in contact with the medium; and

an electric field source that provides an electric field across the first and second layers to inject charge to an interface between the first layer and the second layer.

19. The system as set forth in claim 18 further comprising:

a housing which defines a chamber, the conductive base is adjacent to an opening to the chamber;

wherein at least a portion of the chamber is filled with the medium and at least a portion of the target is substantially covered by the medium;

wherein the electrode is at least partially in the medium in the chamber on an opposing side of the target from the conductive base.

20. The system as set forth in claim 19 wherein the housing is made of a non-conducting material.

21. The system as set forth in claim 19 wherein the opening of the chamber of the housing is secured against a portion of the first layer.

22. The system as set forth in claim 21 further comprising a seal that seals the opening of the chamber against the portion of the first layer.

23. The system as set forth in claim 19 wherein the conductive base is secured across the opening to the chamber in the housing.

24. The system as set forth in claim 18 wherein the medium has a conductivity between about 1×

10<sup>−

4</sup> and 1×

10<sup>−

10</sup> siemens.

25. The system as set forth in claim 18 wherein the medium is one of a fluid and a solid.

26. The system as set forth in claim 18 wherein the first and second layers are dissimilar insulators.

27. The system as set forth in claim 18 wherein the target further comprises a third layer on first layer.

28. The system as set forth in claim 27 further comprising at least one opening in the third layer to expose a portion of the first layer, wherein a remaining portion of the third layer substantially prevents the injection of the charge to a portion of the interface between the first layer and the second layer covered by the remaining portion of the third layer.

29. The system as set forth in claim 27 wherein the first layer comprises silicon nitride, the second layer comprises silicon dioxide, and the third layer comprises silicon dioxide.

30. The system as set forth in claim 27 wherein the target further comprises a substrate on the second layer.

31. The system as set forth in claim 18 further comprising a third layer on the second layer.

32. The system as set forth in claim 31 wherein the first layer comprises silicon dioxide, the second layer comprises silicon nitride, and the third layer comprises silicon dioxide.

33. The system as set forth in claim 31 wherein the target further comprises a substrate on the third layer.

34. The system as set forth in claim 18 wherein the charge trapped at the interface is monopole charge.