IC card

• US 20050045729A1
• Filed: 08/18/2004
• Published: 03/03/2005
• Est. Priority Date: 08/29/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 7,566,001 B2
• Time in Patent Office: Days
• US Class Current: 235/492
• CPC Class Codes: G06K 19/0704 the battery being rechargeable, e.g. solar batteries
• CPC Class Codes: G06K 19/072 the record carrier comprising a plurality of integrated circuit chips
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/077 Constructional details, e.g. mounting of circuits in the carrier
• CPC Class Codes: G06K 19/07703 the interface being visual
• CPC Class Codes: G06K 19/07743 External electrical contacts
• CPC Class Codes: G06K 19/07747 at least one of the integrated circuit chips being mounted as a module
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/5388 for flat cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

The present invention provides an IC card that can realize high function without increasing the size of an IC chip, and that can realize cost reduction. The IC card comprises a first single crystal integrated circuit, a second integrated circuit, and a display device. The second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate, and the first single crystal integrated circuit is mounted on the plastic substrate so as to be electrically connected to the second integrated circuit.

Claims

1. An IC card comprising:

a first single crystal integrated circuit;

a second integrated circuit; and

a display device,

wherein the second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate; and

wherein the first single crystal integrated circuit is mounted over the plastic substrate so as to be electrically connected to the second integrated circuit.

5. The IC card according to claim 1, wherein semiconductor elements used in the second integrated circuit and the display device are each formed from a polycrystalline semiconductor film.

6. The IC card according to claim 1, wherein the display device is an active matrix type.

7. The IC card according to claim 1, wherein the display device is a liquid crystal display device.

8. The IC card according to claim 1, wherein the display device is a light emitting device.

11. The IC card according to claim 1, wherein the first single crystal integrated circuit is mounted over the plastic substrate by a COG method.

12. The IC card according to claim 1, wherein a thickness of the second integrated circuit is 1 μ

m or more and 5 μ

m or less.

13. The IC card according to claim 1, wherein a thickness of the IC card is 0.5 mm or more and 1.5 mm or less.

38. The IC card according to claim 1,

wherein the first single crystal integrated circuit is packed, and

wherein a mode of packaging is selected from the group consisting of CSP, MCP DIP, QFP, and SOP.

2. An IC card comprising:

a first single crystal integrated circuit;

a second integrated circuit; and

a display device,

wherein the second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate;

wherein the first single crystal integrated circuit is mounted over the plastic substrate so as to be electrically connected to the second integrated circuit;

wherein the first single crystal integrated circuit includes an analog circuit or a high frequency circuit; and

wherein the second integrated circuit includes a digital circuit.

14. The IC card according to claim 2, wherein semiconductor elements used in the second integrated circuit and the display device are each formed from a polycrystalline semiconductor film.

15. The IC card according to claim 2, wherein the display device is an active matrix type.

16. The IC card according to claim 2, wherein the display device is a liquid crystal display device.

17. The IC card according to claim 2, wherein the display device is a light emitting device.

18. The IC card according to claim 2, wherein the first single crystal integrated circuit is mounted over the plastic substrate by a COG method.

19. The IC card according to claim 2, wherein a thickness of the second integrated circuit is 1 μ

m or more and 5 μ

m or less.

20. The IC card according to claim 2, wherein a thickness of the IC card is 0.5 mm or more and 1.5 mm or less.

39. The IC card according to claim 2,

wherein the first single crystal integrated circuit is packed, and

wherein a mode of packaging is selected from the group consisting of CSP, MCP DIP, QFP, and SOP.

3. An IC card comprising:

a first single crystal integrated circuit;

a second integrated circuit; and

a display device,

wherein the second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate;

wherein the first single crystal integrated circuit is mounted over the plastic substrate so as to be electrically connected to the second integrated circuit; and

wherein driving of the display device is controlled by the second integrated circuit.

21. The IC card according to claim 3, wherein semiconductor elements used in the second integrated circuit and the display device are each formed from a polycrystalline semiconductor film.

22. The IC card according to claim 3, wherein the display device is an active matrix type.

23. The IC card according to claim 3, wherein the display device is a liquid crystal display device.

24. The IC card according to claim 3, wherein the display device is a light emitting device.

25. The IC card according to claim 3, wherein the first single crystal integrated circuit is mounted over the plastic substrate by a COG method.

26. The IC card according to claim 3, wherein a thickness of the second integrated circuit is 1 μ

m or more and 5 μ

m or less.

27. The IC card according to claim 3, wherein a thickness of the IC card is 0.5 mm or more and 1.5 mm or less.

40. The IC card according to claim 3,

wherein the first single crystal integrated circuit is packed, and

wherein a mode of packaging is selected from the group consisting of CSP, MCP DIP, QFP, and SOP.

4. An IC card comprising:

a first single crystal integrated circuit;

a second integrated circuit; and

a display device,

wherein the second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate;

wherein the first single crystal integrated circuit is mounted over the plastic substrate so as to be electrically connected to the second integrated circuit;

wherein the first single crystal integrated circuit includes an analog circuit or a high frequency circuit; and

wherein driving of the display device is controlled by the second integrated circuit.

28. The IC card according to claim 4, wherein semiconductor elements used in the second integrated circuit and the display device are each formed from a polycrystalline-semiconductor film.

29. The IC card according to claim 4, wherein the display device is an active matrix type.

30. The IC card according to claim 4, wherein the display device is a liquid crystal display device.

31. The IC card according to claim 4, wherein the display device is a light emitting device.

32. The IC card according to claim 4, wherein the first single crystal integrated circuit is mounted over the plastic substrate by a COG method.

33. The IC card according to claim 4, wherein a thickness of the second integrated circuit is 1 μ

m or more and 5 μ

m or less.

34. The IC card according to claim 4, wherein a thickness of the IC card is 0.5 mm or more and 1.5 mm or less.

41. The IC card according to claim 4,

wherein the first single crystal integrated circuit is packed, and

wherein a mode of packaging is selected from the group consisting of CSP, MCP DIP, QFP, and SOP.

9. An IC card comprising:

a first single crystal integrated circuit; and

a second integrated circuit,

wherein the second integrated circuit is formed from a thin film semiconductor film, over a plastic substrate, and

wherein the first single crystal integrated circuit is mounted over the plastic substrate so as to be electrically connected to the second integrated circuit.

10. The IC card according to claim 9, wherein a semiconductor element used in the second integrated circuit is formed from a polycrystalline semiconductor film.

35. The IC card according to claim 9, wherein the first single crystal integrated circuit is mounted over the plastic substrate by a COG method.

36. The IC card according to claim 9, wherein a thickness of the second integrated circuit is 1 μ

m or more and 5 μ

m or less.

37. The IC card according to claim 9, wherein a thickness of the IC card is 0.5 mm or more and 1.5 mm or less.

42. The IC card according to claim 9,

wherein the first single crystal integrated circuit is packed, and

wherein a mode of packaging is selected from the group consisting of CSP, MCP DIP, QFP, and SOP.