Semiconductor device and method of manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a first semiconductor region of a first conductivity type; and
a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a heterojunction with the first semiconductor region.
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Abstract
An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a heterojunction with the first semiconductor region.
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Citations
25 Claims
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1. A semiconductor device comprising:
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a first semiconductor region of a first conductivity type; and
a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a heterojunction with the first semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of manufacturing a semiconductor device, comprising:
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forming a first semiconductor region from a first semiconductor material;
forming a second semiconductor region on a surface of the first semiconductor region from a second semiconductor material whose band gap is different from that of the first semiconductor material, thereby forming a heterojunction between the first semiconductor region and the second semiconductor region; and
introducing impurities into a surface of the second semiconductor region, to form an impurity introduced region in the first semiconductor region that forms the heterojunction with the second semiconductor region. - View Dependent Claims (24, 25)
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Specification