Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
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Abstract
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X<1 and 0≦Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.
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Citations
105 Claims
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1-57. -57. (Canceled).
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58. A Group III nitride based semiconductor device, comprising:
a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦
X<
1 and 0≦
Y<
1 and X is not equal to Y.- View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76)
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77. A gallium nitride based light emitting diode, comprising:
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a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦
X<
1 and 0≦
Y<
1 and X is not equal to Y; and
a gallium nitride based active region on the gallium nitride based superlattice. - View Dependent Claims (78)
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79. A method of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure, comprising:
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forming a well support layer comprising a Group III nitride;
forming a quantum well layer comprising a Group III nitride on the quantum well support layer; and
forming a cap layer comprising a Group III nitride on the quantum well layer. - View Dependent Claims (80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105)
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Specification