Nitride-based light emitting device, and method of manufacturing the same

• US 20050045907A1
• Filed: 07/15/2004
• Published: 03/03/2005
• Est. Priority Date: 08/25/2003
• Status: Active Grant

• Current Assignee: Gwangju Institute of Science and Technology, Samsung Electronics Co. Ltd.
• Original Assignee: Gwangju Institute of Science and Technology, Samsung Electronics Co. Ltd.
• Inventors: Seong, Tae-yeon, Song, June-o
• Granted Patent: US 7,462,877 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.

Claims

1. A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer, the light emitting device comprising:

a reflective layer which reflects light emitting from the light emitting layer; and

at least one metal layer which is formed between the reflective layer and the P-type clad layer.

2. The light emitting device of claim 1, wherein the metal layer comprises any one selected from the first metal group consisting of zinc, indium and tin.

3. The light emitting device of claim 2, wherein the metal layer is the addition of any one of selected from the second metal group consisting of nickel, cobalt, copper, palladium, platinum, ruthenium, rhodium, iridium, tantalum, rhenium, tungsten, and a lanthanum-based metal, to any one selected from the first metal group.

4. The light emitting device of claim 3, wherein an addition ratio of the second metal group to the first metal group is 0.1 to 51 atomic percentages.

5. The light emitting device of claim 1, wherein the reflective layer is formed of silver.

6. The light emitting device of claim 1, wherein the reflective layer is formed of rhodium.

7. The light emitting device of claim 1, wherein the metal layer comprises:

a first metal layer formed on the P-type clad layer; and

a second metal layer formed between the first metal layer and the reflective layer,

the first metal layer is formed of any one of selected from the second metal group consisting of nickel, cobalt, copper, palladium, platinum, ruthenium, rhodium, iridium, tantalum, rhenium, tungsten, and a lanthanum-based metal, and

the second metal layer is formed of any one of selected from the first metal group consisting of zinc, indium and tin.

8. The light emitting device of claim 7, wherein the second metal layer is formed by addition of any one selected from the second metal group to any one selected from the first metal group.

9. The light emitting device of claim 1, wherein the metal layer and the reflective layer have a thickness of 0.1 nm to 10 μ

m .

10. The light emitting device of claim 1, wherein the N-type clad layer is formed on a substrate that is formed of light transmission material.

11. The light emitting device of claim 10, wherein the substrate is formed of sapphire.

12. A method of manufacturing a nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer, the method comprising:

forming at least one metal layer on the P-type clad layer of a light emitting structure with the N-type clad layer, the light emitting layer and the P-type clad layer sequentially layered on a substrate;

forming a reflective layer on the metal layer; and

annealing the resultant layer structure having the reflective layer.

13. The method of claim 12, wherein the metal layer comprises any one selected from the first metal group consisting of zinc, indium and tin.

14. The method of claim 13, wherein the metal layer is the addition of any one of selected from the second metal group consisting of nickel, cobalt, copper, palladium, platinum, ruthenium, rhodium, iridium, tantalum, rhenium, tungsten, and a lanthanum-based metal, to any one selected from the first metal group.

15. The method of claim 14, wherein an addition ratio of the second metal group to the first metal group is 0.1 to 51 atomic percentages.

16. The method of claim 12, wherein the reflective layer is formed of silver.

17. The method of claim 12, wherein the reflective layer is formed of rhodium.

18. The method of claim 12, wherein the forming of the metal layer comprises:

forming a first metal layer on the P-type clad layer; and

forming a second metal layer between the first metal layer and the reflective layer,

the first metal layer is formed of any one of selected from the second metal group consisting of nickel, cobalt, copper, palladium, platinum, ruthenium, rhodium, iridium, tantalum, rhenium, tungsten, and a lanthanum-based metal, and

the second metal layer is formed of anyone of selected from the first metal group consisting of zinc, indium and tin.

19. The method of claim 18, wherein the second metal layer is formed by addition of any one selected from the second metal group to any one selected from the first metal group.

20. The method of claim 12, wherein the metal layer and the reflective layer have a thickness of 0.1 nm to 10 μ

m .

21. The method of claim 12, wherein the N-type clad layer is formed on a substrate that is formed of light transmission material.

22. The method of claim 21, wherein the substrate is formed of sapphire.

23. The method of claim 12, wherein the annealing is performed at 20°

C. to 700°

C.

24. The method of claim 23, wherein the annealing is performed in gas atmosphere containing at least one of nitrogen, argon, helium, oxygen, hydrogen, and air within a reactor in which the layer structure is installed.