Semiconductor device

• US 20050045989A1
• Filed: 08/27/2004
• Published: 03/03/2005
• Est. Priority Date: 09/01/2003
• Status: Active Grant

• Current Assignee: Godo Kaisha IP Bridge 1 (IP Bridge, Inc.)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Fukui, Tsukasa, Ishida, Kaoru
• Granted Patent: US 7,053,461 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142

Abstract

A semiconductor device includes: a semiconductor substrate in which a semiconductor element is formed; a multilayer structured wiring layer that is provided on the semiconductor substrate, the wiring layer forming a structure connected with the semiconductor element; a spiral inductor that is formed in at least one layer of the wiring layer; and a connection terminal formed in an uppermost layer of the wiring layer for establishing connection from the wiring layer to an outside such as a printed board. A shielding wiring pattern is disposed between the spiral inductor and the connection terminal, the shielding wiring pattern functioning as an electromagnetic shield for the uppermost layer of the wiring layer. The shielding wiring pattern absorbs a change in electrical field caused by a potential change in the connection terminal, providing a shielding structure which suppresses the superposing of noise and an unnecessary signal onto the spiral inductor from the connection terminal.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate in which a semiconductor element is formed;

a multilayer structured wiring layer that is provided on the semiconductor substrate, the wiring layer forming a structure connected with the semiconductor element;

a spiral inductor that is formed in at least one layer of the wiring layer; and

a connection terminal formed in an uppermost layer of the wiring layer for establishing connection from the wiring layer to an outside such as a printed board,

wherein a shielding wiring pattern is disposed between the spiral inductor and the connection terminal, the shielding wiring pattern functioning as an electromagnetic shield for the uppermost layer of the wiring layer.

2. The semiconductor device according to claim 1, wherein the spiral inductor is formed in the uppermost layer of the wiring layer.

3. The semiconductor device according to claim 1,

wherein at least two spiral inductors are provided,

the two spiral inductors are arranged to be symmetric with respect to a predetermined center line, and

the shielding wiring pattern is arranged to be symmetric with respect to the center line.

4. The semiconductor device according to claim 1, wherein the spiral inductor is used as a resonant element of an oscillating circuit.

5. Radio equipment provided with the semiconductor device according to claim 1.