Semiconductor device, method for manufacturing the same, circuit board, and electronic apparatus

• US 20050048698A1
• Filed: 07/26/2004
• Published: 03/03/2005
• Est. Priority Date: 07/31/2003
• Status: Active Grant

• Current Assignee: Advanced Interconnect Systems Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Yamaguchi, Koji
• Granted Patent: US 7,223,634 B2
• Time in Patent Office: Days
• US Class Current: 438/109
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/02377 Fan-in arrangement
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/0651 Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06586 : Housing with external bump or bump-like connectors
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

Exemplary embodiments of the present invention include a semiconductor device, a method for manufacturing the same, a circuit board and an electronic apparatus with increased productivity and reliability. An exemplary method for manufacturing a semiconductor device of the present invention includes forming a conductive part in a concave part on a first surface of a semiconductor substrate, the first surface having a plurality of chip mounting areas. Stacking at least one semiconductor chip in each of the chip mounting areas, providing a sealing member on the first surface of the semiconductor substrate and making part of a second surface of the semiconductor substrate thin so as to make the conductive part penetrate from the first surface to the second surface.

Claims

1. A method for manufacturing a semiconductor device, comprising:

(a) forming a conductive part in a concave part on a first surface of a substrate, the first surface having a plurality of chip mounting areas;

(b) stacking a semiconductor chip in the chip mounting areas;

(c) providing a sealing member on the first surface of the substrate; and

(d) making part of a second surface of the substrate thin so as to make the conductive part penetrate from the first surface to the second surface.

2. The method for manufacturing a semiconductor device according to claim 1, after steps (a) through (d), further comprising:

cutting a portion between the chip mounting areas to make a plurality of pieces.

3. The method for manufacturing a semiconductor device according to claim 2, further including cutting the sealing member with a first cutter, while the substrate is cut with a second cutter.

4. The method for manufacturing a semiconductor device according to claim 1, step (a) further including forming the concave part on the substrate;

forming an insulating layer inside the concave part; and

forming the conductive part in the concave part with the insulating layer therebetween.

5. The method for manufacturing a semiconductor device according to claim 1, step (b) further including mounting at least one chip in each of the chip mounting areas.

6. The method for manufacturing a semiconductor device according to claim 1, step (b) further including stacking a dummy chip in any of the chip mounting areas.

7. The method for manufacturing a semiconductor device according to claim 6, step (b) further including mounting at least one chip in each of the chip mounting areas, the chip being the semiconductor chip or the dummy chip.

8. The method for manufacturing a semiconductor device according to claim 1, the semiconductor chip further including a penetrating electrode penetrating to the both sides, and step (b) further including coupling electrically the semiconductor chip to the conductive part on the substrate with the penetrating electrode therebetween.

9. The method for manufacturing a semiconductor device according to claim 1, step (b) further including coupling electrically the semiconductor chip to the conductive part on the substrate with a wire therebetween.

10. The method for manufacturing a semiconductor device according to claim 1, step (c) further including forming a mask having an opening on the first surface side of the substrate and filling the opening with a material of the sealing member.

11. The method for manufacturing a semiconductor device according to claim 1, further including performing step (c) in a chamber in which a pressure is reduced from atmospheric pressure.

12. The method for manufacturing a semiconductor device according to claim 1, after step (d), further comprising:

forming a wiring layer to include a plurality of land parts electrically coupled to the conductive part.

13. The method for manufacturing a semiconductor device according to claim 12, further comprising:

forming a resin layer on the second surface side of the substrate, the resin layer on which the land parts are formed.

14. The method for manufacturing a semiconductor device according to claim 12, further comprising:

providing an external terminal on the land parts.

15. The method for manufacturing a semiconductor device according to claim 1, the substrate being a semiconductor substrate.

16. The method for manufacturing a semiconductor device according to claim 15, further comprising:

providing a plurality of integrated circuits on the semiconductor substrate; and

placing the integrated circuits in each of the chip mounting areas and electrically coupling the integrated circuits to the conductive part.

17. The method for manufacturing a semiconductor device according to claim 1, the substrate being an interposer.

18. A semiconductor device, comprising:

a substrate having a first surface and a second surface, the substrate including;

a plurality of chip mounting areas on the first surface; and

a penetrating electrode penetrating from the first surface to the second surface;

a semiconductor chip stacked in each of the chip mounting areas of the substrate; and

a sealing member provided on the first surface of the substrate.

19. The semiconductor device according to claim 18, the substrate being a semiconductor substrate.

20. The semiconductor device according to claim 19, further including a plurality of integrated circuits provided on the semiconductor substrate, the integrated circuits being placed in each of the chip mounting areas and electrically coupled to the penetrating electrode.

21. The semiconductor device according to claim 18, a portion between the chip mounting areas being cut.

22. A circuit board, comprising:

the semiconductor device according to claim 18.

23. An electronic apparatus, comprising:

the semiconductor device according to claim 18.