Biased pulse DC reactive sputtering of oxide films
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Abstract
A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.
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Citations
84 Claims
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1-39. -39. (Canceled).
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40. A method of depositing a film on a substrate, comprising:
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providing process gas between the target and a substrate;
providing pulsed DC power to a target;
providing a magnetic field to the target; and
wherein a material is deposited on the substrate. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
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63. A reactor according to the present invention, comprising:
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a target area for receiving a target;
a magnetic field generator supplying a magnetic field to the target;
a substrate area opposite the target area for receiving a substrate; and
a pulsed DC power supply coupled to the target, wherein a material is deposited on the substrate when pulsed DC power from the pulsed DC power supply is applied to the target in the presence of a process gas. - View Dependent Claims (64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84)
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Specification