METHOD OF DEFECT ROOT CAUSE ANALYSIS

• US 20050049836A1
• Filed: 04/02/2004
• Published: 03/03/2005
• Est. Priority Date: 09/03/2003
• Status: Abandoned Application

• Current Assignee: Powerchip Semiconductor Corporation (Powerchip Technology Corporation)
• Original Assignee: Powerchip Semiconductor Corporation (Powerchip Technology Corporation)
• Inventors: Lin, Long-Hui
• Application Number:
  US10/708,943
• Publication Number:
  US 20050049836A1
• Time in Patent Office: Days
• US Class Current: 702/185
• CPC Class Codes: H01J 2237/2511 Auger spectrometers
• CPC Class Codes: H01J 2237/2561 electron
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14

Abstract

A method of defect root cause analysis. First, a sample with a plurality defects thereon is provided. Then, a defect inspection is performed to detect the sizes and positions of the defects. After that, a chemical state analysis is performed, and a mapping analysis is made according to a result of the chemical state analysis. Thus, a root cause of defects can be obtained according to a result of the mapping analysis.

Claims

1. A method of defect root cause analysis comprising following steps:

providing a sample which comprises a plurality of defects;

performing a defect inspection to detect sizes and locations of the plurality of defects;

performing a chemical state analysis of the sample;

performing a mapping analysis according to a result of the chemical state analysis; and

analyzing the root cause of the defects according to a result of the mapping analysis.

2. The method of claim 1 further comprising performing a defect classification after finishing the defect inspection for judging a defect type of the defects and performing a corresponding chemical state analysis according to the defect type of the defects.

3. The method of claim 1 wherein an auger analysis is performed in the chemical state analysis when the defects are smaller than 0.2 μ

m or are not single phase particles.

4. The method of claim 3 wherein the auger analysis utilized a scanning auger microscopy (SAM) or an auger electron spectroscopy (AES) to perform the chemical state analysis of the sample.

5. The method of claim 1 wherein an energy dispersive spectrometer (EDS) is utilized to detect in the chemical state analysis when the defects are equal to or larger than 0.2 μ

m, single phase, or thick particles.

6. The method of claim 1 wherein the chemical state analysis comprises a point scan analysis, delayer analysis, and depth profile analysis.

7. A method of defect root cause analysis comprising following steps:

providing a sample with a plurality of defects;

performing a voltage contrast to identify locations of the defects;

cutting the sample with a focus ion beam (FIB) to expose a cross-section of the sample;

utilizing auger electrons to perform a chemical state analysis of the cross-section of the sample;

performing a mapping analysis according to a result of the chemical state analysis; and

judging a root cause of the defect generation according to a result of the mapping analysis.

8. The method of the claim 7 wherein the method utilizes a scanning auger microscopy (SAM) or an auger electron spectroscopy (AES) to perform a chemical state analysis of the cross-section of the sample.

9. The method of claim 7 wherein the chemical state analysis comprises a point scan analysis.