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Semiconductor device and manufacturing method thereof

  • US 20050051825A1
  • Filed: 02/09/2004
  • Published: 03/10/2005
  • Est. Priority Date: 09/09/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a fin-shaped semiconductor layer which is formed on the semiconductor substrate, is long in a first direction and is short in a second direction crossing the first direction;

    a gate insulating layer formed on side surfaces of the semiconductor layer in the second direction;

    a gate electrode arranged so as to be adjacent to the gate insulating layer;

    a channel area formed at a position adjacent to the gate insulating layer in the semiconductor layer;

    a source/drain extension area which is formed at a position adjacent to the channel area in the semiconductor layer in the first direction; and

    a source/drain area which is formed at a position adjacent to the source/drain extension area in the semiconductor layer in the first direction, wherein a width of the semiconductor layer in the channel area in the second direction is smaller than a width of the semiconductor layer in the source/drain area in the second direction.

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