Semiconductor device

• US 20050051869A1
• Filed: 11/25/2003
• Published: 03/10/2005
• Est. Priority Date: 09/10/2003
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Watanabe, Kentaro
• Granted Patent: US 6,921,959 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01F 2017/008 Electric or magnetic shielding of printed inductances
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 257/904 with passive components,, e.g. polysilicon resistors

Abstract

A semiconductor device includes a semiconductor substrate, an insulating layer, an inductor, a guard ring and a potential-applying line. The insulating layer is formed on the semiconductor substrate. The inductor is formed on the insulating layer. The guard ring is formed in the semiconductor substrate, surrounding the inductor and being a closed ring composed of waving segments connected, end to end. The potential-applying line applies a predetermined potential to the guard ring.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

an insulating layer formed on the semiconductor substrate;

an inductor formed on the insulating layer;

a guard ring formed in the semiconductor substrate, surrounding the inductor and being a closed ring composed of waving segments connected, end to end; and

a potential-applying line which applies a predetermined potential to the guard ring.

2. The semiconductor device according to claim 1, wherein the potential-applying line comprises a first contact plug which connects one part of the guard ring to a power-supply line.

3. The semiconductor device according to claim 1, wherein the potential-applying line comprises a first line which is provided above the guard ring and which is composed of waving segments connected, end to end, and a plurality of second contact plugs which connect the first line to the guard ring.

4. The semiconductor device according to claim 3, wherein the potential-applying line is an open ring made by cutting and removing a part of a closed ring.

5. The semiconductor device according to claim 3, wherein the guard ring is an open ring made by cutting and removing a part of a first closed ring, and the potential-applying line is an open ring made by cutting and removing that part of a second closed ring which is aligned with said part of the first closed ring.

6. The semiconductor device according to claim 1, wherein the guard ring comprises first segments and second segments which are alternately arranged and connected to one another, the second segments extending at right angles to the first segments.

10. The semiconductor device according to claim 1, wherein the inductor is shaped like a spiral.

12. The semiconductor device according to claim 1, wherein the semiconductor substrate is of a first conductivity type, and the guard ring has been formed by adding impurities of the first conductivity type to the semiconductor substrate.

7. A semiconductor device comprising:

a semiconductor substrate;

an insulating layer formed on the semiconductor substrate;

an inductor formed on the insulating layer;

a guard ring formed in the semiconductor substrate, surrounding the inductor and being composed of a plurality of segments spaced apart from one another; and

a potential-applying line which applies a predetermined potential to the guard ring and which comprises a plurality of segments located above spaces between the segments of the guard ring, respectively.

8. The semiconductor device according to claim 7, further comprising a plurality of contact plugs which connect the guard ring and the potential-applying line in series.

9. The semiconductor device according to claim 7, further comprising a second contact plug which connects a part of the potential-applying line to a power-supply terminal which applies the predetermined potential.

11. The semiconductor device according to claim 7, wherein the inductor is shaped like a spiral.

13. The semiconductor device according to claim 7, wherein the semiconductor substrate is of a first conductivity type, and the guard ring has been formed by adding impurities of the first conductivity type to the semiconductor substrate.