Electro-optical device and method of driving the same

• US 20050052391A1
• Filed: 09/15/2004
• Published: 03/10/2005
• Est. Priority Date: 06/14/1991
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hiroki, Masaaki, Mase, Akira, Yamazaki, Shunpei
• Granted Patent: US 7,928,946 B2
• Time in Patent Office: Days
• US Class Current: 345/92
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G09G 2300/0823 used to establish symmetry in driving, e.g. with polarity inversion
• CPC Class Codes: G09G 2310/027 Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters
• CPC Class Codes: G09G 2330/04 Display protection
• CPC Class Codes: G09G 3/2018 by time modulation using two or more time intervals
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: G09G 3/3677 suitable for active matrices only
• CPC Class Codes: G09G 3/3685 Details of drivers for data electrodes
• CPC Class Codes: G09G 3/3688 suitable for active matrices only
• CPC Class Codes: G09G 5/395 Arrangements specially adapted for transferring the contents of the bit-mapped memory to the screen G09G5/399 takes precedence

Abstract

The method of fine gradation display by an electro-optical device with little influence by difference in elemental devices, is disclosed, which is an object of the present invention. In case of an active matrix electro-optical device, a visual gradation display can be carried out by digitizing an analog image signal externally supplied by means of binary notation, by temporarily storing the digital signal thus obtained, by outputting the digital signal to a circuit of next step in a proper order, and by controlling the output timing of the signal so as to output the signal to the active matrix electro-optical device, and whereby digitally controlling the time for applying voltage to a picture element.

Claims

1. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a plurality of protection circuits disposed over the substrate between the pixel area and the peripheral driving circuit wherein each of the plurality of protection circuits is electrically connected to one of the plurality of first signal lines,

wherein each of the protection circuits comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series.

2. The active matrix display device according to claim 1 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

3. The active matrix display device according to claim 1 wherein each of the first diode and the second diode has a PIN junction.

4. The active matrix display device according to claim 1 wherein the peripheral driving circuit is formed over said substrate.

5. The active matrix display device according to claim 1 wherein the gate electrode of the thin film transistor comprises molybdenum.

6. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a plurality of protection circuits comprising a doped semiconductor and disposed over the substrate between the pixel area and the peripheral driving circuit wherein each of the plurality of protection circuits is electrically connected to one of the plurality of first signal lines,

wherein each of the protection circuits comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series.

7. The active matrix display device according to claim 6 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

8. The active matrix display device according to claim 6 wherein each of the first diode and the second diode has a PIN junction.

9. The active matrix display device according to claim 6 wherein the peripheral driving circuit is formed over said substrate.

10. The active matrix display device according to claim 6 wherein the gate electrode of the thin film transistor comprises molybdenum.

11. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a plurality of protection circuits comprising an un-doped semiconductor and disposed over the substrate between the pixel area and the peripheral driving circuit wherein each of the plurality of protection circuits is electrically connected to one of the plurality of first signal lines,

wherein each of the protection circuits comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series.

12. The active matrix display device according to claim 11 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

13. The active matrix display device according to claim 11 wherein each of the first diode and the second diode has a PIN junction.

14. The active matrix display device according to claim 11 wherein the peripheral driving circuit is formed over said substrate.

15. The active matrix display device according to claim 11 wherein the gate electrode of the thin film transistor comprises molybdenum.

16. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a plurality of protection circuits comprising a transparent conductive material and disposed over the substrate between the pixel area and the peripheral driving circuit wherein each of the plurality of protection circuits is electrically connected to one of the plurality of first signal lines,

wherein each of the protection circuits comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series.

17. The active matrix display device according to claim 16 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

18. The active matrix display device according to claim 16 wherein each of the first diode and the second diode has a PIN junction.

19. The active matrix display device according to claim 16 wherein the peripheral driving circuit is formed over said substrate.

20. The active matrix display device according to claim 16 wherein the gate electrode of the thin film transistor comprises molybdenum.

21. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate;

a capacitor electrically connected to one of the plurality of pixel electrodes and comprising a wiring; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a plurality of protection circuits disposed over the substrate between the pixel area and the peripheral driving circuit wherein each of the plurality of protection circuits is electrically connected to one of the plurality of first signal lines,

wherein each of the protection circuits comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series, and the wiring of the plurality of capacitors and the grounding conductor are formed from a same conductive layer.

22. The active matrix display device according to claim 21 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

23. The active matrix display device according to claim 21 wherein each of the first diode and the second diode has a PIN junction.

24. The active matrix display device according to claim 21 wherein the peripheral driving circuit is formed over said substrate.

25. The active matrix display device according to claim 21 wherein the gate electrode of the thin film transistor comprises molybdenum.

26. The active matrix display device according to claim 21 wherein the gate electrode of the thin film transistor is formed from said same conductive layer.

27. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate;

a capacitor electrically connected to one of the plurality of pixel electrodes and comprising a wiring; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a plurality of protection circuits comprising a doped semiconductor and disposed over the substrate between the pixel area and the peripheral driving circuit wherein each of the plurality of protection circuits is electrically connected to one of the plurality of first signal lines,

wherein each of the protection circuits comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series, and the wiring of the plurality of capacitors and the grounding conductor are formed from a same conductive layer.

28. The active matrix display device according to claim 27 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

29. The active matrix display device according to claim 27 wherein each of the first diode and the second diode has a PIN junction.

30. The active matrix display device according to claim 27 wherein the peripheral driving circuit is formed over said substrate.

31. The active matrix display device according to claim 27 wherein the gate electrode of the thin film transistor comprises molybdenum.

32. The active matrix display device according to claim 27 wherein the gate electrode of the thin film transistor is formed from said same conductive layer.

33. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate;

a capacitor electrically connected to one of the plurality of pixel electrodes and comprising a wiring; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a plurality of protection circuits comprising an un-doped semiconductor and disposed over the substrate between the pixel area and the peripheral driving circuit wherein each of the plurality of protection circuits is electrically connected to one of the plurality of first signal lines,

wherein each of the protection circuits comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series, and the wiring of the plurality of capacitors and the grounding conductor are formed from a same conductive layer.

34. The active matrix display device according to claim 33 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

35. The active matrix display device according to claim 33 wherein each of the first diode and the second diode has a PIN junction.

36. The active matrix display device according to claim 33 wherein the peripheral driving circuit is formed over said substrate.

37. The active matrix display device according to claim 33 wherein the gate electrode of the thin film transistor comprises molybdenum.

38. The active matrix display device according to claim 33 wherein the gate electrode of the thin film transistor is formed from said same conductive layer.

39. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate;

a capacitor electrically connected to one of the plurality of pixel electrodes and comprising a wiring; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a plurality of protection circuits comprising a transparent conductive material and disposed over the substrate between the pixel area and the peripheral driving circuit wherein each of the plurality of protection circuits is electrically connected to one of the plurality of first signal lines,

wherein each of the protection circuits comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series, and the wiring of the plurality of capacitors and the grounding conductor are formed from a same conductive layer.

40. The active matrix display device according to claim 39 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

41. The active matrix display device according to claim 39 wherein each of the first diode and the second diode has a PIN junction.

42. The active matrix display device according to claim 39 wherein the peripheral driving circuit is formed over said substrate.

43. The active matrix display device according to claim 39 wherein the gate electrode of the thin film transistor comprises molybdenum.

44. A display device comprising:

a plurality of pixel electrodes over a substrate;

a plurality of first thin film transistors formed over said substrate for switching said pixel electrodes, respectively;

a protection circuit formed over said substrate, said protection circuit including at least one second thin film transistor, wherein a gate of said second thin film transistor is electrically connected to one of a drain or a source of said second transistor, and the other one of the drain or the source is grounded;

an A/D converter for converting an analog image data into k digits of digital data;

a gradation data memory for storing said k digits of digital data;

a first in first out memory device connected with said gradation data memory;

means for transferring said k digits of digital data from said gradation data memory into said first in first out memory device; and

means for transferring said k digits of digital data to a driver circuit to generate pulses to be applied to said pixel electrodes,

wherein said k digits of digital data stored in said gradation data memory is transferred in such a manner that each two digits of data is paired and simultaneously transferred to said first in first out memory device.

45. A display device comprising:

a plurality of first signal lines extending in parallel over a substrate;

a plurality of second signal lines extending across said plurality of first signal lines over the substrate;

a plurality of first thin film transistors formed over said substrate at each intersection between the first signal lines and the second signal lines wherein a gate electrode of the first thin film transistors is connected to a corresponding one of the first signal lines;

a plurality of pixel electrodes formed over the substrate and electrically connected to said plurality of first thin film transistors; and

a protection circuit formed over said substrate, said protection circuit including at least one second thin film transistor, wherein a gate of said second thin film transistor is electrically connected to one of a drain or a source of said second transistor, and the other one of the drain or the source is grounded,

wherein an arbitral one of the first signal lines is applied with a plurality of pulses at intervals where said intervals are T₁ between the i-th pulse and the (i+1)-th pulse, 2^NT₁ between the (i+1)-th pulse and the (i+2)-th pulse, 2T₁ between the (i+2)-th pulse and the (i+3)-th pulse, and 2<sup>N−

1</sup>T₁ between the (i+3)-th pulse and the (i+4)-th pulse where N is a natural number, i is a natural number and T₁ is a constant period.

46. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a protection circuit disposed over the substrate wherein the protection circuit comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series.

47. The active matrix display device according to claim 46 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

48. The active matrix display device according to claim 46 wherein each of the first diode and the second diode has a PIN junction.

49. The active matrix display device according to claim 46 wherein the peripheral driving circuit is formed over said substrate.

50. The active matrix display device according to claim 46 wherein the gate electrode of the thin film transistor comprises molybdenum.

51. The active matrix display device according to claim 46 wherein the gate electrode of the thin film transistor is formed from a same conductive layer.

52. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a protection circuit comprising a doped semiconductor and disposed over the substrate wherein the protection circuit comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series.

53. The active matrix display device according to claim 52 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

54. The active matrix display device according to claim 52 wherein each of the first diode and the second diode has a PIN junction.

55. The active matrix display device according to claim 52 wherein the peripheral driving circuit is formed over said substrate.

56. The active matrix display device according to claim 52 wherein the gate electrode of the thin film transistor comprises molybdenum.

57. The active matrix display device according to claim 52 wherein the gate electrode of the thin film transistor is formed from a same conductive layer.

58. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a protection circuit comprising an un-doped semiconductor and disposed over the substrate wherein the protection circuit comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series.

59. The active matrix display device according to claim 58 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

60. The active matrix display device according to claim 58 wherein each of the first diode and the second diode has a PIN junction.

61. The active matrix display device according to claim 58 wherein the peripheral driving circuit is formed over said substrate.

62. The active matrix display device according to claim 58 wherein the gate electrode of the thin film transistor comprises molybdenum.

63. The active matrix display device according to claim 58 wherein the gate electrode of the thin film transistor is formed from a same conductive layer.

64. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a protection circuit comprising a transparent conductive material and disposed over the substrate wherein the protection circuit comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series.

65. The active matrix display device according to claim 64 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

66. The active matrix display device according to claim 64 wherein each of the first diode and the second diode has a PIN junction.

67. The active matrix display device according to claim 64 wherein the peripheral driving circuit is formed over said substrate.

68. The active matrix display device according to claim 64 wherein the gate electrode of the thin film transistor comprises molybdenum.

69. The active matrix display device according to claim 64 wherein the gate electrode of the thin film transistor is formed from a same conductive layer.

70. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate;

a capacitor electrically connected to one of the plurality of pixel electrodes and comprising a wiring; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a protection circuit disposed over the substrate,

wherein the protection circuit comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series, and the wiring of the plurality of capacitors and the grounding conductor are formed from a same conductive layer.

71. The active matrix display device according to claim 70 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

72. The active matrix display device according to claim 70 wherein each of the first diode and the second diode has a PIN junction.

73. The active matrix display device according to claim 70 wherein the peripheral riving circuit is formed over said substrate.

74. The active matrix display device according to claim 70 wherein the gate electrode of the thin film transistor comprises molybdenum.

75. The active matrix display device according to claim 70 wherein the gate electrode of the thin film transistor is formed from said same conductive layer.

76. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate;

a capacitor electrically connected to one of the plurality of pixel electrodes and comprising a wiring; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a protection circuit comprising a doped semiconductor and disposed over the substrate,

wherein the protection circuit comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series, and the wiring of the plurality of capacitors and the grounding conductor are formed from a same conductive layer.

77. The active matrix display device according to claim 76 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

78. The active matrix display device according to claim 76 wherein each of the first diode and the second diode has a PIN junction.

79. The active matrix display device according to claim 76 wherein the peripheral riving circuit is formed over said substrate.

80. The active matrix display device according to claim 76 wherein the gate electrode of the thin film transistor comprises molybdenum.

81. The active matrix display device according to claim 76 wherein the gate electrode of the thin film transistor is formed from said same conductive layer.

82. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate;

a capacitor electrically connected to one of the plurality of pixel electrodes and comprising a wiring; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a protection circuit comprising an un-doped semiconductor and disposed over the substrate,

wherein the protection circuit comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series, and the wiring of the plurality of capacitors and the grounding conductor are formed from a same conductive layer.

83. The active matrix display device according to claim 82 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

84. The active matrix display device according to claim 82 wherein each of the first diode and the second diode has a PIN junction.

85. The active matrix display device according to claim 82 wherein the peripheral riving circuit is formed over said substrate.

86. The active matrix display device according to claim 82 wherein the gate electrode of the thin film transistor comprises molybdenum.

87. The active matrix display device according to claim 82 wherein the gate electrode of the thin film transistor is formed from said same conductive layer.

88. An active matrix display device comprising:

a pixel area comprising;

a plurality of first signal lines formed over a substrate;

a plurality of second signal lines formed over said substrate and extending across said plurality of first signal lines to define a plurality of pixels arranged in a matrix form;

a plurality of pixel electrodes formed at each of said pixels over said substrate;

a capacitor electrically connected to one of the plurality of pixel electrodes and comprising a wiring; and

a thin film transistor formed over said substrate and electrically connected to one of the plurality of pixel electrodes wherein a gate electrode of the thin film transistor is electrically connected to one of the plurality of first signal lines,

a peripheral driving circuit electrically connected to the plurality of first signal lines; and

a protection circuit comprising a transparent conductive material and disposed over the substrate,

wherein the protection circuit comprises a first diode and a second diode connected between a grounding conductor and a voltage supply line in series, and the wiring of the plurality of capacitors and the grounding conductor are formed from a same conductive layer.

89. The active matrix display device according to claim 88 wherein said thin film transistor has a crystalline semiconductor film as an active layer.

90. The active matrix display device according to claim 88 wherein each of the first diode and the second diode has a PIN junction.

91. The active matrix display device according to claim 88 wherein the peripheral riving circuit is formed over said substrate.

92. The active matrix display device according to claim 88 wherein the gate electrode of the thin film transistor comprises molybdenum.

93. The active matrix display device according to claim 88 wherein the gate electrode of the thin film transistor is formed from said same conductive layer.