Structure, method of manufacturing the same, and device using the same

• US 20050053773A1
• Filed: 08/06/2004
• Published: 03/10/2005
• Est. Priority Date: 02/12/2002
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Fukutani, Kazuhiko, Den, Tohru
• Granted Patent: US 7,282,268 B2
• Time in Patent Office: Days
• US Class Current: 428/209
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: C30B 23/00 Single-crystal growth by condensing evaporated or sublimed materials
• CPC Class Codes: C30B 29/60 characterised by shape
• CPC Class Codes: G11C 2216/08 Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/12 characterised by the materials of which they are formed
• CPC Class Codes: H01L 29/7613 Single electron transistors; Coulomb blockade devices H01L29/7888 takes precedence
• CPC Class Codes: H10N 99/05 Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
• CPC Class Codes: Y10T 428/24917 including metal layer

Abstract

A composite structure is formed so as to contain aluminum and silicon or silicon/germanium. The composite structure comprises pillar-shaped members containing aluminum and a region containing silicon or silicon/germanium and surrounding the pillar-shaped members. The structure contains silicon or silicon/germanium at a content not less than 20 atomic % and not more than 70 atomic % relative to the total amount aluminum and silicon or silicon/germanium.

Claims

1. A structure containing a first material and a second material, said structure comprising pillar-shaped members containing the first material and a region containing the second material and surrounding the pillar-shaped members provided that the second material is not composed of only germanium, the structure containing the second material at a content not less than 20 atomic % and not more than 70 atomic % relative to the total amount of the first and second materials.

2. The structure according to claim 1, wherein said first material is aluminum.

3. The structure according to claim 1 or 2, wherein said second material is silicon or a mixture of silicon and germanium.

4. The structure according to claim 1 or 2, wherein said structure contains said second material at a content not less than 30 atomic % and not more than 60 atomic %.

5. The structure according to claim 1, wherein the average diameter of said pillar-shaped members is not more than 50 nm.

6. The structure according to claim 1, wherein the distance between the centers of any two adjacently located ones of said pillar-shaped members contained in said structure is not more than 30 nm.

7. A device comprising a structure according to claim 1.

8. A method of manufacturing a structure, comprising a step of preparing a substrate and a step of forming a film on the substrate in a non-equilibrium state, the film having a structure comprising pillar-shaped members containing a first material and a region containing a second material and surrounding the pillar-shaped members provided that the second material is not composed of only germanium, the structure containing the second material at a content not less than 20 atomic % and not more than 70 atomic % relative to the total amount of the first and second materials.

9. A film-shaped aluminum silicon composite structure, comprising pillar-shaped structures containing aluminum-and a silicon region surrounding the pillar-shaped structures, the composite structure containing silicon at a content not less than 20 atomic % and not more than 70 atomic %.

10. The composite structure according to claim 9, wherein the content of silicon in said composite structure is not less than 25 atomic % and not more than 65 atomic %.

11. The composite structure according to claim 10, wherein the content of silicon in said composite structure is not less than 30 atomic % and not more than 60 atomic %.

12. The composite structure according to any of claims 9 through 11, wherein the diameters of said pillar-shaped structures are not less than 0.5 nm and not more than 50 nm.

13. The composite structure according to claim 12, wherein the diameters of said pillar-shaped structures are not less than 0.5 nm and not more than 10 nm.

14. The composite structure according to any of claims 9 through 11, wherein the distance between the centers of any two adjacently located ones of said pillar-shaped structures is not more than 30 nm.

15. The composite structure according to claim 14, wherein the distance between the centers of any two adjacently located ones of said pillar-shaped structures is not more than 15 nm.

16. The composite structure according to any of claims 9 through 11, wherein said silicon region contains amorphous silicon as principal ingredient.

17. The composite structure according to claim 16, wherein said composite structure is formed on an insulator.

18. An electronic device comprising an aluminum silicon composite structure according to claim 9.

19. A method of manufacturing an aluminum silicon composite structure, comprising preparing said composite structure by means of a method of forming a film on a substrate in a non-equilibrium state.

20. A method of manufacturing a film-shaped aluminum silicon composite structure, comprising a step of preparing a substrate and a step of forming a film on the substrate in a non-equilibrium state, the formed film having an aluminum silicon composite structure comprising pillar-shaped structures containing aluminum and a silicon region surrounding the pillar-shaped structures, the composite structure containing silicon at a content not less than 20 atomic % and not more than 70 atomic %.

21. The method according to claim 20, wherein said step of forming a film in a non-equilibrium state is carried out by conducting a sputtering method.

22. The method according to claim 21, wherein said sputtering method is conducted by using a target material separately including aluminum and silicon.

23. The method according to claim 21, wherein said sputtering method is conducted by keeping a substrate at temperatures not higher than 300°

C. when forming an aluminum silicon composite film containing silicon by 20 to 70 atomic % relative to the total amount of aluminum and silicon.

24. A film-shaped aluminum silicon germanium composite structure, comprising pillar-shaped structures containing aluminum and a silicon germanium region surrounding the pillar-shaped structures, the composite structure containing silicon and germanium at a combined content not less than 20 atomic % and not more than 70 atomic %.

25. The composite structure according to claim 24, wherein the combined content of silicon and germanium in said composite structure is not less than 25 atomic % and not more than 65 atomic %.

26. The composite structure according to claim 25, wherein the combined content of silicon and germanium in said composite structure is not less than 30 atomic % and not more than 60 atomic %.

27. The composite structure according to any of claims 24 through 26, wherein the diameters of said pillar-shaped structures are not-less than 0.5 nm and not more than 30 nm.

28. The composite structure according to claim 27, wherein the diameters of said pillar-shaped structures are not Hess than 0.5 nm and not more than 15 nm.

29. The composite structure according to any of claims 24 through 26, wherein the distance between the centers of any two adjacently located ones of said pillar-shaped structures is not more than 30 nm.

30. The composite structure according to claim 29, wherein the distance between the centers of any two adjacently located ones of said pillar-shaped structures is not more than 20 nm.

31. The composite structure according to any of claims 24 through 26, wherein said silicon germanium region contains amorphous silicon germanium as principal ingredient.

32. The composite structure according to any of claims 24 through 26, wherein if the content ratio of silicon to germanium in said silicon germanium region is expressed as composition Si_xGe_1-x where Si represents silicon and Ge represents germanium, x is within the range of 0<

x<

1.

33. The composite structure according to claim 31, wherein said composite structure is formed on an insulator.

34. An electronic device comprising an aluminum silicon germanium composite structure according to claim 24.

35. A method of manufacturing an aluminum silicon germanium composite structure, comprising preparing said composite structure by means of a method of forming a film on a substrate in a non-equilibrium state.

36. A method of manufacturing a film-shaped aluminum silicon germanium composite structure, comprising a step of preparing a substrate and a step of forming a film on the substrate in a non-equilibrium state, the formed film having an aluminum silicon germanium composite structure comprising pillar-shaped structures containing aluminum and a silicon germanium region surrounding the pillar-shaped structures, the composite structure containing silicon and germanium at a combined content not less than 20 atomic % and not more than 70 atomic %.

37. The method according to claim 36, wherein said step of forming a film in a non-equilibrium state is carried out by conducting a sputtering method.

38. The method according to claim 37, wherein said sputtering method is conducted by keeping a substrate at temperatures not higher than 300°

C. when forming an aluminum silicon germanium composite film containing silicon and germanium by 20 to 70 atomic % relative to the total amount of aluminum, silicon and germanium.

39. A structure comprising a plurality of pillar-shaped members and a region surrounding the lateral surfaces of the plurality of pillar-shaped members, the pillar-shaped members having a diameter not more than 20 nm, the distance between the centers of any two adjacently located ones of the pillar-shaped members being not more than 30 nm.

40. A structure comprising pillar-shaped members containing aluminum and a region surrounding the pillar-shaped members, the pillar-shaped members and the region being formed simultaneously, the pillar-shaped members having a diameter not more than 20 nm.