Solution to thermal budget

• US 20050054131A1
• Filed: 07/22/2004
• Published: 03/10/2005
• Est. Priority Date: 07/23/2003
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wada, Yuichi, Leon, Francisco A.
• Granted Patent: US 7,101,725 B2
• Time in Patent Office: Days
• US Class Current: 438/31
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: C30B 29/12 Halides
• CPC Class Codes: C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure C30B31/00 takes precedence
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 31/035254 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices

Abstract

A method of fabricating on optical detector, the method including providing a substrate that includes an optical waveguide formed therein and having a surface for fabricating microelectronic circuitry thereon; fabricating microelectronic circuitry on the substrate, the fabricating involving a plurality of sequential process phases; after a selected one of the plurality of sequential process phases has occurred and before the next process phase after the selected one of the plurality of process phases begins, fabricating an optical detector within the optical waveguide; and after fabricating the optical detector in the waveguide, completing the plurality of sequential process phases for fabricating the microelectronic circuitry.

Claims

1. A method of fabricating an optical detector, the method comprising:

providing a substrate that includes an optical waveguide formed therein and having a surface for fabricating microelectronic circuitry thereon;

fabricating microelectronic circuitry on the surface of the substrate, said fabricating involving a plurality of sequential process phases;

after a selected one of said plurality of sequential process phases has occurred and before the next process phase after said selected one of said plurality of process phases begins, fabricating an optical detector within the optical waveguide; and

after fabricating the optical detector in the waveguide, completing the plurality of sequential process phases for fabricating the microelectronic circuitry.

2. The method of claim 1, wherein the optical detector has a thermal budget associated therewith and wherein the selected process phase is chosen so that completing the plurality of sequential process phases after fabricating the optical detector does not exceed the thermal budget of the optical detector.

3. The method of claim 1, wherein the microelectronic circuitry being fabricated has a thermal budget associated therewith and wherein the selected process phase is chosen so that fabricating the optical detector does not exceed the thermal budget for the microelectronic circuitry being fabricated.

4. The method of claim 1, wherein the selected process phase is chosen so that completing the plurality of sequential process phases after fabricating the optical detector does not damage the optical detector.

5. The method of claim 1, wherein the selected process phase is chosen so that fabricating the optical detector does not damage the microelectronic circuitry being fabricated.

6. The method of claim 1, wherein fabricating the optical detector involves employing a maximum process temperature of T(1)max and wherein the selected process phase is chosen to be one of said plurality of process phases during which exposing the substrate to the process temperature of T(1)max will not damage the microelectronic circuitry that is being fabricated on the substrate and after which exposing the substrate to a process temperature of T(1)max will damage microelectronic circuitry that is being fabricated on the substrate.

7. The method of claim 1, wherein process temperatures that are greater than T(1)max are will damage the optical detector and wherein the selected process phase is chosen to be one of said plurality of process phases after which the substrate will be exposed to process temperatures that are no greater than T(1)max.

8. The method of claim 1, wherein fabricating the microelectronic circuitry is in accordance with CMOS fabrication techniques.

9. The method of claim 8, wherein the plurality of sequential process phases includes a silicide phase and wherein the selected one of the process phases occurs before the silicide phase.

10. The method of claim 8, wherein the plurality of sequential process phases includes a thermal treatment to diffuse in dopants in drains and sources of CMOS devices and wherein the selected one of the process phases is the thermal treatment phase.

11. The method of claim 10, wherein the plurality of sequential process phases includes a silicide phase and wherein the selected one of the process phases occurs before the silicide phase.

12. A method of fabricating on optical detector, the method comprising:

providing a substrate that includes an optical waveguide formed therein and having a surface for fabricating microelectronic circuitry thereon;

in accordance with a CMOS fabrication process, fabricating microelectronic circuitry on the substrate, said CMOS fabrication process including a plurality a sequential process phases;

after a selected one of said plurality of sequential process phases has occurred and before the next process phase after said selected one of said plurality of process phases begins, fabricating an optical detector within the optical waveguide; and

after fabricating the optical detector in the waveguide, completing the plurality of sequential process phases for fabricating the microelectronic circuitry.

13. The method of claim 12, wherein the plurality of sequential process phases includes a silicide phase and wherein the selected one of the process phases occurs before the silicide phase.

14. The method of claim 12, wherein the plurality of sequential process phases includes a thermal treatment to diffuse in dopants in drains and sources of CMOS devices and wherein the selected one of the process phases is the thermal treatment phase.

15. The method of claim 14, wherein the plurality of sequential process phases includes a silicide phase and wherein the selected one of the process phases occurs before the silicide phase.