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Transparent amorphous carbon structure in semiconductor devices

  • US 20050056835A1
  • Filed: 02/27/2004
  • Published: 03/17/2005
  • Est. Priority Date: 09/12/2003
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming an amorphous carbon layer for a semiconductor structure including introducing a carbon-containing process gas over a wafer to form the amorphous carbon layer having an absorption coefficient between about 0.001 and about 0.15 at a wavelength of 633 nanometers.

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