Semiconductor device and method of manufacturing thereof
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;
crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;
forming a first semiconductor element by using the crystallized semiconductor film as a first active region;
attaching a support to the first semiconductor element;
causing separation between the metal film and the insulating film;
forming a second amorphous semiconductor film over the first semiconductor element after attaching a second substrate to the insulating film and separating the support; and
forming a second semiconductor element using the second amorphous semiconductor film as a second active region.
1 Assignment
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Accused Products
Abstract
The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.
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Citations
24 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;
crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;
forming a first semiconductor element by using the crystallized semiconductor film as a first active region;
attaching a support to the first semiconductor element;
causing separation between the metal film and the insulating film;
forming a second amorphous semiconductor film over the first semiconductor element after attaching a second substrate to the insulating film and separating the support; and
forming a second semiconductor element using the second amorphous semiconductor film as a second active region. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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2. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;
crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;
forming a first semiconductor element by using the crystallized semiconductor film as a first active region;
forming a second amorphous semiconductor film;
forming a second semiconductor element using the second amorphous semiconductor film as a second active region;
attaching a support to the first semiconductor element and the second semiconductor element; and
causing separation between the metal film and the insulating film.
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3. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;
crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;
forming a first semiconductor element by using the crystallized semiconductor film as a first active region;
forming a second amorphous semiconductor film;
forming a second semiconductor element using the second amorphous semiconductor film as a second active region;
attaching a support to the first semiconductor element and the second semiconductor element;
causing separation between the metal film and the insulating film; and
separating the support after attaching a second substrate to the insulating film.
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4. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;
crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;
forming a first semiconductor element by using the crystallized semiconductor film as a first active region;
attaching a support to the first semiconductor element by using an adhesive;
causing separation between the metal film and the insulating film;
forming a second amorphous semiconductor film over the first semiconductor element after attaching a second substrate to the insulating film by using an adhesive bond and separating the support by removing the adhesive; and
forming a second semiconductor element using the second amorphous semiconductor film as a second active region.
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5. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;
crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;
forming a first semiconductor element by using the crystallized semiconductor film as a first active region;
forming a second amorphous semiconductor film;
forming a second semiconductor element using the second amorphous semiconductor film as a second active region;
attaching a support to the first semiconductor element and the second semiconductor element by using an adhesive; and
causing separation between the metal film and the insulating film.
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;
crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;
forming a first semiconductor element by using the crystallized semiconductor film as a first active region;
forming a second amorphous semiconductor film;
forming a second semiconductor element using the second amorphous semiconductor film as a second active region;
attaching a support to the first semiconductor element and the second semiconductor element by using an adhesive;
causing separation between the metal film and the insulating film; and
separating the support by removing the adhesive after attaching a second substrate to the separated insulating film by using an adhesive bond.
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- 17. A semiconductor device comprising a first semiconductor element using a crystalline semiconductor film as a first active region and a second semiconductor element using an amorphous semiconductor film as a second active region over an adhesive.
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18. A semiconductor device comprising a first semiconductor element using a crystalline semiconductor film as a first active region and a second semiconductor element using an amorphous semiconductor film as a second active region over a plastic substrate.
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19. A semiconductor device comprising a first semiconductor element using a crystalline semiconductor film as a first active region and a second semiconductor element using an amorphous semiconductor film as a second active region over an adhesive,
wherein the first semiconductor element and the second semiconductor element are electrically connected to each other.
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20. A semiconductor device comprising a first semiconductor element using a crystalline semiconductor film as a first active region and a second semiconductor element using an amorphous semiconductor film as a second active region over a plastic substrate,
wherein the first semiconductor element and the second semiconductor element are electrically connected to each other.
Specification