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Semiconductor device and method of manufacturing thereof

  • US 20050056842A1
  • Filed: 01/02/2004
  • Published: 03/17/2005
  • Est. Priority Date: 01/08/2003
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;

    crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;

    forming a first semiconductor element by using the crystallized semiconductor film as a first active region;

    attaching a support to the first semiconductor element;

    causing separation between the metal film and the insulating film;

    forming a second amorphous semiconductor film over the first semiconductor element after attaching a second substrate to the insulating film and separating the support; and

    forming a second semiconductor element using the second amorphous semiconductor film as a second active region.

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