Thin film bulk acoustic resonator, method for producing the same, filter, composite electronic component device, and communication device
First Claim
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1. A thin film bulk acoustic resonator comprising:
- a piezoelectric film; and
a pair of electrodes between which the piezoelectric film is interposed, wherein, the piezoelectric film includes an outer region extending outwards from at least a portion of a periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film, and the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves.
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Abstract
A thin film bulk acoustic resonator includes a piezoelectric film, and a pair of electrodes between which the piezoelectric film is interposed. The piezoelectric film includes an outer region extending outwards from at least a portion of the periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film. The outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves.
118 Citations
20 Claims
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1. A thin film bulk acoustic resonator comprising:
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a piezoelectric film; and
a pair of electrodes between which the piezoelectric film is interposed, wherein, the piezoelectric film includes an outer region extending outwards from at least a portion of a periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film, and the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for producing a thin film bulk acoustic resonator, comprising the steps of:
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forming a lower electrode on or above a substrate;
forming a piezoelectric film on or above the lower electrode; and
forming an upper electrode on or above the piezoelectric film, wherein, the step of forming the piezoelectric film comprises;
forming the piezoelectric film so as to have a region extending outwards from at least a portion of a periphery of a resonator portion composed of the upper electrode, the lower electrode, and the piezoelectric film; and
ensuring that at least a portion of the region of the piezoelectric film extending outwards has a lower crystallinity than that of the resonator portion of the piezoelectric film, thereby forming an acoustic damping region for damping acoustic waves. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A thin film bulk acoustic resonator filter comprising a plurality of interconnected thin film bulk acoustic resonators,
each thin film bulk acoustic resonator including: -
a piezoelectric film; and
an upper electrode and a lower electrode between which the piezoelectric film is interposed, wherein, the piezoelectric film in at least one of the plurality of thin film bulk acoustic resonators includes an outer region extending outwards from at least a portion of a periphery of a resonator portion composed of the upper electrode, the lower electrode, and the piezoelectric film, the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves, and the acoustic damping region is provided at least between those of the plurality of thin film bulk acoustic resonators having different resonance frequencies. - View Dependent Claims (18)
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19. A composite electronic component device comprising a thin film bulk acoustic resonator filter including a plurality of interconnected thin film bulk acoustic resonators,
each thin film bulk acoustic resonator including: -
a piezoelectric film; and
an upper electrode and a lower electrode between which the piezoelectric film is interposed, wherein, the piezoelectric film in at least one of the plurality of thin film bulk acoustic resonators includes an outer region extending outwards from at least a portion of a periphery of a resonator portion composed of the upper electrode, the lower electrode, and the piezoelectric film, the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves, and the acoustic damping region is provided at least between those of the plurality of thin film bulk acoustic resonators having different resonance frequencies.
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20. A communication device comprising a thin film bulk acoustic resonator filter including a plurality of interconnected thin film bulk acoustic resonators,
each thin film bulk acoustic resonator including: -
a piezoelectric film; and
an upper electrode and a lower electrode between which the piezoelectric film is interposed, wherein, the piezoelectric film in at least one of the plurality of thin film bulk acoustic resonators includes an outer region extending outwards from at least a portion of a periphery of a resonator portion composed of the upper electrode, the lower electrode, and the piezoelectric film, the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves, and the acoustic damping region is provided at least between those of the plurality of thin film bulk acoustic resonators having different resonance frequencies.
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Specification