Light emitting device processes
First Claim
Patent Images
1. A method comprising:
- providing a multilayer stack including a substrate, a semiconductor layer, and a quantum well containing region;
etching at least a portion of the quantum well containing region to provide an etched multilayer stack including a plurality of mesas supported by the substrate;
bonding the etched multilayer stack to a submount; and
removing the substrate.
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Abstract
Light-emitting devices, and related components, processes, systems and methods are disclosed.
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Citations
125 Claims
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1. A method comprising:
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providing a multilayer stack including a substrate, a semiconductor layer, and a quantum well containing region;
etching at least a portion of the quantum well containing region to provide an etched multilayer stack including a plurality of mesas supported by the substrate;
bonding the etched multilayer stack to a submount; and
removing the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98)
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99. A method of making a light emitting device, the method comprising:
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providing an etched multilayer stack including a plurality of mesas supported by a substrate, at least some of the mesas including a semiconductor layer and a quantum well containing region;
bonding the etched multilayer stack to a submount;
removing the substrate; and
forming at least one light emitting device from at least one of the mesas.
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100. A method comprising:
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providing a first article including a substrate that supports a plurality of mesas; and
forming a second article from the first article, wherein the second article includes a submount supporting at least some of the plurality of mesas. - View Dependent Claims (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111)
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112. A method comprising:
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providing a multilayer stack including a substrate and a semiconductor layer;
etching at least a portion of the multilayer stack to provide an etched multilayer stack including a plurality of gas accumulation regions;
bonding the etched multilayer stack to a submount;
exposing the semiconductor layer to electromagnetic radiation to partially decompose the semiconductor layer, wherein exposing the semiconductor layer to electromagnetic radiation generates gas and the gas accumulates in the gas accumulation regions. - View Dependent Claims (113, 114)
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115. A method comprising:
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providing a multilayer stack including a substrate, a semiconductor layer, and a bonding layer;
etching at least a portion of the bonding layer to provide an etched multilayer stack; and
bonding the etched multilayer stack to a submount. - View Dependent Claims (116, 117, 118, 119)
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120. A method for bonding a multilayer stack to a submount, the method comprising:
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providing a multilayer stack including a substrate, a semiconductor layer, and a bonding layer;
determining an amount of non-planarity present in the multilayer stack;
determining an amount of etching necessary to reduce the non-planarity to a predetermined level; and
etching the multilayer stack based on the determined amount of etching. - View Dependent Claims (121, 122, 123, 124, 125)
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Specification