Photovoltaic cell and method of fabricating the same
First Claim
1. A photovoltaic cell comprising:
- a crystal-based semiconductor having one face and another face;
an intrinsic first amorphous-based semiconductor film;
a second amorphous-based semiconductor film including impurities showing a first conductivity-type;
a first electrode;
a semiconductor layer including impurities showing another conductivity-type different from said one conductivity-type; and
a second electrode, wherein said first amorphous-based semiconductor film, said second amorphous-based semiconductor film, and said first electrode are formed in this order on a first region of said one face of said crystal-based semiconductor, and said semiconductor layer and said second electrode are formed in this order on a second region of said one face of said crystal-based semiconductor.
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Abstract
An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon substrate. On a back surface of the n-type single-crystalline silicon substrate are provided a positive electrode and a negative electrode next to each other. The positive electrode includes an i-type amorphous silicon film, a p-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate. The negative electrode includes an i-type amorphous silicon film, an n-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate.
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Citations
20 Claims
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1. A photovoltaic cell comprising:
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a crystal-based semiconductor having one face and another face;
an intrinsic first amorphous-based semiconductor film;
a second amorphous-based semiconductor film including impurities showing a first conductivity-type;
a first electrode;
a semiconductor layer including impurities showing another conductivity-type different from said one conductivity-type; and
a second electrode, wherein said first amorphous-based semiconductor film, said second amorphous-based semiconductor film, and said first electrode are formed in this order on a first region of said one face of said crystal-based semiconductor, and said semiconductor layer and said second electrode are formed in this order on a second region of said one face of said crystal-based semiconductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A photovoltaic cell comprising:
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a crystal-based semiconductor having one face and another face;
an intrinsic first amorphous-based semiconductor film formed on said one face of said crystal-based semiconductor;
a second amorphous-based semiconductor film including impurities showing one conductivity-type;
a third amorphous-based semiconductor film including impurities showing another conductivity-type different from said one conductivity-type;
a first electrode; and
a second electrode, wherein said second amorphous-based semiconductor film is formed on a first region of said first amorphous-based semiconductor film, said third amorphous-based semiconductor film is formed on a second region of said first amorphous-based semiconductor film and said second amorphous-based semiconductor film, said first electrode is formed on said third amorphous-based semiconductor film on top of said first region, and said second electrode is formed on said third amorphous-based semiconductor film on top of said second region.
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15. A photovoltaic cell comprising:
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a crystal-based semiconductor having one face and another face;
an intrinsic first amorphous-based semiconductor film;
a second amorphous-based semiconductor film including impurities showing one conductivity-type;
a first electrode;
an intrinsic third amorphous-based semiconductor film;
a fourth amorphous-based semiconductor film including impurities showing another conductivity-type different from said one conductivity-type; and
a second electrode, wherein said first amorphous-based semiconductor film is formed on a first region of the one face of said crystal-based semiconductor, said second amorphous-based semiconductor film is formed on said first amorphous-based semiconductor film, said first electrode is formed on said second amorphous-based semiconductor film, said third amorphous-based semiconductor film is formed on a second region of said one face of said crystal-based semiconductor and said first electrode, said fourth amorphous-based semiconductor film is formed on said third amorphous-based semiconductor film, and said second electrode is formed on said fourth amorphous-based semiconductor film on top of said second region.
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16. A method of fabricating a photovoltaic cell comprising the steps of:
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forming an intrinsic first amorphous-based semiconductor film on a first region of one face of a crystal-based semiconductor;
forming a second amorphous-based semiconductor film including impurities showing one conductivity-type on said first amorphous-based semiconductor film;
forming a semiconductor layer including impurities showing another conductivity-type different from said one conductivity-type on a second region of said one face of said crystal-based semiconductor;
forming a first electrode on said second amorphous-based semiconductor film; and
forming a second electrode on said semiconductor layer. - View Dependent Claims (17, 18)
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19. A method of fabricating a photovoltaic cell comprising the steps of:
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forming an intrinsic first amorphous-based semiconductor film on one face of a crystal-based semiconductor;
forming a second amorphous-based semiconductor film including impurities showing one conductivity-type on a first region of said first crystal-based semiconductor film;
forming a third amorphous-based semiconductor film including impurities showing another conductivity-type different from said one conductivity-type on a second region of said first amorphous-based semiconductor film and said second amorphous-based semiconductor film;
forming a first electrode on said third amorphous-based semiconductor film on top of said first region; and
forming a second electrode on said third amorphous-based semiconductor film on top of said second region.
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20. A method of fabricating a photovoltaic cell comprising the steps of:
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forming an intrinsic first amorphous-based semiconductor film on a first region of one face of a crystal-based semiconductor;
forming a second amorphous-based semiconductor film including impurities showing one conductivity-type on said first amorphous-based semiconductor film;
forming a first electrode on said second amorphous-based semiconductor film;
forming an intrinsic third amorphous-based semiconductor film on a second region of said one face of said crystal-based semiconductor and said first electrode;
forming a fourth amorphous-based semiconductor film including impurities showing another conductivity-type different from said one conductivity-type on said third amorphous-based semiconductor film; and
forming a second electrode on said fourth amorphous-based semiconductor film on top of said second region.
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Specification