Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
First Claim
1. A semiconductor apparatus, comprising:
- a substrate having a substrate surface;
a layer of a first material overlying a first region of said substrate surface;
a layer of a semiconductor overlying said layer of first material and overlying a second region of said substrate surface;
a first region of said layer of semiconductor, overlying said layer of first material and having a first conductivity;
a second region of said layer of semiconductor, overlying said second region of said substrate surface and having a second conductivity; and
said first conductivity being substantially different from said second conductivity.
4 Assignments
0 Petitions
Accused Products
Abstract
Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.
46 Citations
26 Claims
-
1. A semiconductor apparatus, comprising:
-
a substrate having a substrate surface;
a layer of a first material overlying a first region of said substrate surface;
a layer of a semiconductor overlying said layer of first material and overlying a second region of said substrate surface;
a first region of said layer of semiconductor, overlying said layer of first material and having a first conductivity;
a second region of said layer of semiconductor, overlying said second region of said substrate surface and having a second conductivity; and
said first conductivity being substantially different from said second conductivity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. A method of making a semiconductor apparatus, comprising the steps of:
-
providing a substrate having a substrate surface;
providing a layer of a first material overlying a first region of said substrate surface; and
providing a layer of a semiconductor overlying said layer of first material and overlying a second region of said substrate surface;
a first region of said layer of semiconductor, overlying said layer of first material and having a first conductivity;
a second region of said layer of semiconductor, overlying said second region of said substrate surface and having a second conductivity; and
said first conductivity being substantially different from said second conductivity. - View Dependent Claims (20, 21, 22, 23)
-
-
24. An integrated circuit, comprising:
-
a substrate having a substrate surface;
a layer of a first material overlying a plurality of first regions of said substrate surface;
a layer of a semiconductor overlying said layer of first material and overlying a second region of said substrate surface;
a plurality of first regions of said layer of semiconductor, overlying said layer of first material and having a first conductivity;
a second region of said layer of semiconductor, overlying said second region of said substrate surface and having a second conductivity;
first and second gate electrodes;
first and second source electrodes;
first and second drain electrodes;
said first conductivity being substantially different from said second conductivity;
said first and second source and drain electrodes respectively being in spaced apart conductive contact with first and second channel portions of either said first regions or said second region of said layer of semiconductor, said first and second channel portions having respective first and second channel conductivities, said first and second gate electrodes being positioned to respectively control said first and second channel conductivities;
wherein said first and second channel portions are mutually isolated by an interposed region of said layer of semiconductor having a substantially lower conductivity than said first and second channel conductivities. - View Dependent Claims (25)
-
-
26. A method of making an integrated circuit, comprising the steps of:
-
providing a substrate having a substrate surface;
providing a layer of a first material overlying a plurality of first regions of said substrate surface;
providing a layer of a semiconductor overlying said layer of first material and overlying a second region of said substrate surface;
providing a plurality of first regions of said layer of semiconductor, overlying said layer of first material and having a first conductivity;
providing a second region of said layer of semiconductor, overlying said second region of said substrate surface and having a second conductivity;
providing first and second gate electrodes;
providing first and second source electrodes;
providing first and second drain electrodes;
said first conductivity being substantially different from said second conductivity;
said first and second source and drain electrodes respectively being in spaced apart conductive contact with first and second channel portions of either said first regions or said second region of said layer of semiconductor, said first and second channel portions having respective first and second channel conductivities, said first and second gate electrodes being positioned to respectively control said first and second channel conductivities;
wherein said first and second channel portions are mutually isolated by an interposed region of said layer of semiconductor having a substantially lower conductivity than said first and second channel conductivities.
-
Specification