Semiconductor device and making thereof
First Claim
1. A semiconductor device comprising;
- a semiconductor substrate;
a first electrode formed over the semiconductor substrate;
a first conductive smoothing layer formed over the first electrode, wherein the first conductive smoothing layer has a surface roughness less than that of the first electrode;
a dielectric layer formed on the first conductive smoothing layer; and
a second electrode formed over the dielectric layer;
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Abstract
By forming a conductive smoothing layer over the bottom electrode and/or a capacitor dielectric, a MIM capacitor with improved reliability due to reduction of geometrically enhanced electric fields and electrode smoothing is formed. In one embodiment, layer including a refractory metal or a refractory metal-rich nitride, is formed over a first capping layer formed of a refractory nitride. In addition, a second refractory metal or a refractory metal-rich nitride layer may be formed on the capacitor dielectric. The smoothing layer could also be used in other semiconductor devices, such as transistors between a gate electrode and a gate dielectric.
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Citations
20 Claims
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1. A semiconductor device comprising;
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a semiconductor substrate;
a first electrode formed over the semiconductor substrate;
a first conductive smoothing layer formed over the first electrode, wherein the first conductive smoothing layer has a surface roughness less than that of the first electrode;
a dielectric layer formed on the first conductive smoothing layer; and
a second electrode formed over the dielectric layer;
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a conductive layer, a smoothing layer formed in contact with the conductive layer, wherein the smoothing layer has a surface roughness less than that of the conductive layer; and
a dielectric layer formed in contact with the smoothing layer. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a semiconductor substrate;
a first electrode formed over the semiconductor substrate, wherein the first electrode comprises a first layer comprising metal and a second layer over the first layer, wherein the second layer comprises a refractory nitride;
a first smoothing layer formed over the first electrode, wherein the first smoothing layer comprises titanium rich nitride;
a dielectric layer formed on the first smoothing layer; and
a second electrode formed over the dielectric layer, wherein the second electrode comprises a third layer comprising a refractory nitride and a fourth layer over the third layer, wherein the fourth layer comprises a metal. - View Dependent Claims (18, 19)
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20. A method for forming semiconductor device comprising:
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providing a semiconductor substrate;
forming a first electrode formed over the semiconductor substrate;
forming a first conductive smoothing layer formed over the first electrode, wherein the first smoothing layer has a surface roughness less than that of the first electrode;
forming a dielectric layer formed on the first smoothing layer; and
forming a second electrode formed over the dielectric layer.
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Specification