Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed
First Claim
1. A method of measuring a film process quantity in a semiconductor device manufacturing process, comprising:
- a) setting standard patterns of differential values of interference light from a first material to be processed that correspond to a predetermined film process quantity of the first material, the standard patterns using the wavelength as a parameter;
b) measuring intensities of interference light of multiple wavelengths from a second material being processed of the same structure as the first material and determining actual patterns of differential values of the measured interference light intensities, the actual patterns using the wavelength as a parameter; and
c) determining a film process quantity of the second material based on the standard patterns of the first material and the actual patterns.
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Accused Products
Abstract
Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
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Citations
2 Claims
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1. A method of measuring a film process quantity in a semiconductor device manufacturing process, comprising:
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a) setting standard patterns of differential values of interference light from a first material to be processed that correspond to a predetermined film process quantity of the first material, the standard patterns using the wavelength as a parameter;
b) measuring intensities of interference light of multiple wavelengths from a second material being processed of the same structure as the first material and determining actual patterns of differential values of the measured interference light intensities, the actual patterns using the wavelength as a parameter; and
c) determining a film process quantity of the second material based on the standard patterns of the first material and the actual patterns.
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2-22. -22. (Cancelled)
Specification