Nanoscale electronic devices & frabrication methods

• US 20050064618A1
• Filed: 08/20/2002
• Published: 03/24/2005
• Est. Priority Date: 08/20/2001
• Status: Active Grant

• Current Assignee: University of Canterbury
• Original Assignee: Canterprise Limited (University of Canterbury)
• Inventors: Brown, Simon Anthony, Schmelzer, Juern
• Granted Patent: US 7,494,907 B2
• Time in Patent Office: Days
• US Class Current: 438/49
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/7613 Single electron transistors; Coulomb blockade devices H01L29/7888 takes precedence
• CPC Class Codes: H10N 99/05 Quantum devices, e.g. quantum interference devices, metal single electron transistors
• CPC Class Codes: Y10S 977/72 On an electrically conducting, semi-conducting, or semi-insulating substrate
• CPC Class Codes: Y10S 977/773 Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Abstract

The invention relates to a method of forming a conducting nanowire between two contacts on a substrate surface wherein a plurality of nanoparticles is deposited on the substrate in the region between the contacts, and the single nanowire running substantially between the two contacts is formed by either by monitoring the conduction between the contacts and ceasing deposition at the onset of conduction, and/or modifying the substrate to achieve, or taking advantage of pre-existing topographical features which will cause the nanoparticles to form the nanowire. The resultant conducting nanowires are also claimed as well as devices incorporating such nanowires.

Claims

1. A method of forming at least a single conducting chain of nanoparticles between a number of contacts on a substrate comprising or including the steps of:

a. forming contacts separated by a distance smaller than 10 microns on the substrate,

b. preparing a plurality of nanoparticles, and

c. randomly depositing a plurality of nanoparticles on the substrate at least in the region between the contacts until the particles form at least one chain of nanoparticles between the contacts through which conduction can occur.

2. A method as claimed in claim 1 wherein the contacts are separated by a distance less than 1000 nm.

3. A method as claimed in claim 2 wherein the contacts are separated by a distance less than 100 nm.

4. A method as claimed in claim 3 wherein the nanoparticles are composed of two or more atoms, which may or may not be of the same element.

5. A method as claimed in claim 2 wherein the nanoparticles may be of uniform or non-uniform size, and the average diameter of the nanoparticles is 0.5 nm to 1,000 nm.

6. A method as claimed in claim 1 wherein the deposition step includes directing a beam of the nanoparticles towards the substrate to deposit the nanoparticles on the substrate.

7. A method as claimed in claim 6 wherein the nanoparticle preparation and deposition steps are via inert gas aggregation and the nanoparticles are atomic clusters made up of a plurality of atoms which may or may not be of the same element.

8. A method as claimed in claim 7 wherein the substrate is an insulating or semiconductor material.

9. A method as claimed in claim 8 wherein the substrate is selected from silicon, silicon nitride, silicon oxide, aluminium oxide, indium tin oxide, germanium, gallium arsenide or any other III-V semiconductor, quartz, or glass.

10. A method as claimed in claim 9 wherein the nanoparticles are selected from bismuth, antimony, aluminium, silicon, germanium, silver, gold, copper, iron, nickel or cobalt clusters.

11. A method as claimed in claim 1 wherein the contacts are formed by lithography.

12. A method as claimed in claim 1 herein the formation of the a least a single conduction chain is either by:

i. monitoring the conduction between the contacts and ceasing deposition at or near to the onset of conduction, or

ii. modifying the substrate surface, or taking advantage of pre-existing topographical features, so as to cause the nanoparticles to form a nanowire when deposited in the region of the modification or topographical features.

13. A method as claimed in claim 12 wherein the step of formation of the chain of conducting nanoparticles is step i., and the geometry of the contacts in relation to each other and in relation to nanoparticle size has been optimised so as to increase the likelihood of the formation of a chain of nanoparticles at a surface coverage where conduction would not normally be expected in a macroscopic film or part thereof, of the same particles.

14. A method as claimed in claim 13 wherein the optimisation is via percolation theory calculations, wherein percolation theory defines a percolation threshold, at which such an arrangement or system becomes conducting, and wherein optimisation gives rise to conduction at a surface coverage that is smaller than the percolation threshold.

15. A method as claimed in claim 14 wherein the average nanoparticle diameter is 0.5 nm to 1000 nm, the contacts are spaced apart by between 4-6×

the average nanoparticle diameter; and

the width of each contact is substantially more than 10×

the contact spacing.

16. A method as claimed in claim 15 wherein the overall geometry of contacts is an interdigitated geometry.

17. A method as claimed in claim 16 wherein the conditions are such to discourage diffusion of the nanoparticles on the substrate surface, including the conditions of temperature, surface smoothness, and/or identity.

18. A method as claimed in claim 12 wherein the step of formation of the chain of conducting nanoparticles is via step ii., and wherein the average nanoparticle diameter is between 0.5 nm to 1000 nm.

19. A method as claimed in claim 18 wherein the modification includes formation of a step, depression or ridge in the substrate surface, running substantially between two contacts.

20. A method as claimed in claim 19 wherein the modification comprises formation of a groove having a substantially v-shaped cross-section running substantially between the contacts.

21. A method as claimed in claim 20 wherein the conditions are such to encourage diffusion of the nanoparticles on the substrate surface, including the conditions of temperature, surface smoothness and/or surface type and/or identity.

22. A method as claimed in claim 21 wherein the modification is by lithography, etching, or a combination thereof.

23. A single conducting chain of nanoparticles between a number of contacts on a substrate prepared substantially according to the method as claimed in any one of claims 1 to 22.

59. A method of fabricating a nanoscale device including or requiring a conduction path between two contacts formed on a substrate, including or comprising the steps of:

A. preparing a conducting nanowire between two contacts on a substrate surface as described in any one of claims 1, 24, or 48.

B. incorporating the contacts and nanowire into the nanoscale device.

60. A method as claimed in claim 59 wherein the device includes two or more contacts and includes one or more of the conducting nanowires.

61. A method as claimed in claim 60 wherein the step of incorporation results in any one or more of the following embodiments:

1. two primary contacts having the conducting nanowire between them, and a least a third contact on the substrate which is not electrically connected to the primary contacts thereby capable of acting as a gate or other element in a amplifying or switching device, transistor or equivalent; and

/or

2. two primary contacts having the conducting nanowire between them, an overlayer or underlayer of an insulating material and a least a third contact on the distal side of the overlayer or underlayer from the primary contacts, whereby the third contact is capable of acting as a gate or other element in a switching device, transistor or equivalent; and

/or

3. the contacts and/or nanowire are protected by an oxide or other non-metallic or semi-conducting film to protect it and/or enhance its properties; and

/or

4. a capping layer (which may or may not be doped) is present over the surface of the substrate with contacts and nanowire, which may or may not be the film of 3.

5. the nanoparticles being annealed on the surface of the substrate;

6. the position of the nanoparticles are controlled by a resist or other organic compound or an oxide or other insulating layer which is applied to the substrate and then processed using lithography to define a region or regions where nanoparticles may take part in electrical conduction between the contacts and another region or regions where the nanoparticles will be insulated from the conducting network.

62. A method as claimed in claim 61 wherein the device is a transistor or other switching device, a film deposition control device, a magnetic field sensor, a chemical sensor, a light emitting or detecting device, or a temperature sensor.

63. A method as claimed in claim 62 wherein the device is a deposition sensor monitoring deposition of a nanoparticle film, and includes at least a pair of contacts with an optimised geometry such that the onset of conduction in the device occurs at a surface coverage where conduction would not normally be expected in a macroscopic film of the same particles, wherein the contact spacing can be selected so as to vary the surface coverage at, or near, the onset of conduction and wherein as a result of the predefined contact spacing the onset of conduction in the nanoparticle film is used to sense when a pre-determined coverage of nanoparticles in the film has been achieved.

64. A method as claimed in claim 63 wherein the device is a deposition sensor and the nanoparticles are coated in ligands or an insulating layer such that the onset of tunnelling conduction is used to monitor the film thickness.

65. A device as claimed in claim 61 wherein conduction through the chain is initiated by an applied voltage or current, either during or subsequent to the deposition of the particles.

24. A method of forming a conducting nanowire between two contacts on a substrate surface comprising or including the steps of:

a. forming the contacts separated by a distance smaller than 10 microns on the substrate,

b. preparing a plurality of nanoparticles,

c. randomly depositing a plurality of nanoparticles on the substrate at least in the region between the contacts,

d. monitoring the formation of the conducting nanowire by monitoring conduction between the two contacts, and ceasing deposition at the onset of conduction.

25. A method as claimed in claim 24 wherein the contacts are separated by a distance smaller than 1000 nm.

26. A method as claimed in claim 25 wherein the contacts are separated by a distance smaller than 100 nm.

27. A method as claimed in claim 24 wherein the nanoparticles have an average diameter of 0.5 nm to 1,000 nm.

28. A method as claimed in claim 24 wherein the deposition step includes directing a beam of the nanoparticles towards the substrate to deposit the nanoparticles on the substrate.

29. A method as claimed in claim 28 wherein the nanoparticle preparation and deposition steps are via inert gas aggregation and the nanoparticles are atomic clusters made up of two or more atoms, which may or may not be of the same element.

30. A method as claimed in claim 24 wherein the geometry of the contacts has been optimised by percolation theory calculations to provide a conducting nanowire at a surface coverage of nanoparticles on the substrate, in the region between the contacts, of less than the percolation threshold.

33. A method as claimed in claim 30 wherein the surface coverage is substantially in the region of 20%.

34. A method as claimed in claim 30 wherein the optimal geometry requires:

a rectangular region between the contacts or a geometrically equivalent region such as interdigitated contacts;

the contacts spaced apart by less than 60×

the average nanoparticle diameter, and

the width of each contact being between more than 10×

the contact spacing.

35. A method as claimed in claim 34 wherein:

the contacts are spaced apart by between 4-6×

the average nanoparticle diameter; and

the length of each contact is substantially more than 10×

the contact spacing.

36. A method as claimed in claim 35 wherein the overall geometry of contacts is an interdigitated geometry.

37. A method as claimed in claim 36 wherein the conditions are such to discourage diffusion of the nanoparticles on the substrate surface, including the conditions of temperature, surface smoothness and/or surface type and/or identity.

38. A method as claimed in claim 28 wherein the substrate has a topograhy in the region between the contacts that promotes the formation of a conducting path of nanoparticles between the contacts.

39. A method as claimed in claim 38 wherein the method includes an additional step before or after step a) or b) but at least before step c) of:

modifying the surface to provide topographical assistance to the positioning of the depositing nanoparticles in order to give rise to a conducting pathway.

40. A method as claimed in claim 39 wherein the modification includes formation of a step, depression, ridge or groove in the substrate surface, running substantially between two contacts.

42. A method as claimed in claim 40 wherein the modification is by lithography, etching, or a combination thereof.

43. A method as claimed in claim 42 wherein the conditions are such to encourage diffusion of the nanoparticles on the substrate surface, including the conditions of temperature, surface smoothness and/or surface type and/or identity.

44. A method as claimed in claim 24 wherein the substrate is an insulating or semiconducting material.

45. A method as claimed in claim 44 wherein the substrate is selected from silicon, silicon nitride, silicon oxide, aluminium oxide, indium tin oxide, germanium, gallium arsenide or any other Ill-V semiconductor, quartz, or glass.

46. A method as claimed in claim 24 wherein the nanoparticles are selected from bismuth, antimony, aluminium, silicon, germanium, silver, gold, copper, iron, nickel or cobalt clusters.

47. A conducting nanowire between two contacts on a substrate surface prepared substantially according to the method claimed in any one of claims 24 to 43.

31. (Canceled)

32. (Canceled)

41. (Canceled)

48. A method of forming a conducting nanowire between two contacts on a substrate surface comprising or including the steps of:

a. forming the contacts separated by a distance smaller than 10 microns on the substrate,

b. preparation of a plurality of nanoparticles,

c. randomly depositing a plurality of nanoparticles, on the substrate in the region between the contacts,

d. achieving a single nanowire running substantially between the two contacts by either;

i. monitoring the conduction between the contacts and ceasing deposition at the onset of conduction, or

ii. modifying the substrate to achieve, or taking advantage of pre-existing topographical features which will cause the nanoparticles to form the nanowire.

49. A method as claimed in claim 48 wherein the contacts are separated by a distance smaller than 1000 nm.

50. A method as claimed in claim 49 wherein the contacts are separated by a distance smaller than 100 nm.

51. A method as claimed in claim 48 wherein the average diameter of the nanoparticles is 0.5 nm to 1,000 nm, and may be of uniform or non-uniform size.

52. A method as claimed in claim 48 wherein the deposition step includes directing a beam of the nanoparticles towards the substrate to deposit the nanoparticles on the substrate.

53. A method as claimed in claim 52 wherein the nanoparticle preparation and deposition steps are via inert gas aggregation and the nanoparticles are atomic clusters made up of two or more atoms which may or may not be of the same element.

54. A method as claimed in claim 53 wherein the contacts are formed by lithography.

55. A method as claimed in claim 54 wherein the substrate is an insulating or semiconducting material.

56. A method as claimed in claim 55 wherein the substrate is selected from silicon, silicon nitride, silicon oxide, aluminium oxide, indium tin oxide, germanium, gallium arsenide or any other III-V semiconductor, quartz, or glass.

57. A method as claimed in claim 53 wherein the nanoparticles are selected from bismuth, antimony, aluminium, silicon, germanium, silver, gold, copper, iron, nickel or cobalt clusters.

58. A conducting nanowire between two contacts on a substrate surface prepared substantially according to the method claimed in any one of claims 48 to 57.