Method for manufacturing a CMOS image sensor
First Claim
1. A method for manufacturing complementary metal oxide semiconductor (CMOS) image sensor structures, comprising the steps of:
- (a) forming a gate insulating layer, a conductive layer and an ion implantation barrier layer on a semiconductor substrate;
(b) patterning said ion implantation barrier layer, said conductive layer, and said gate insulating layer;
(c) forming a photoresist layer on said patterned ion implantation barrier layer, said conductive layer, and said gate insulating layer and patterning said photoresist layer to define a photodiode region in said substrate; and
(d) implanting low-concentration dopant ions into said photodiode region using said photoresist layer pattern as an ion implantation mask to form a low-concentration dopant region of a photodiode.
5 Assignments
0 Petitions
Accused Products
Abstract
A method for manufacturing structures of a CMOS image sensor. The method comprises the steps of depositing a gate insulating layer and a conductive layer on a semiconductor substrate; depositing an ion implantation barrier layer on the conductive layer; patterning the deposited gate insulating layer, conductive layer and ion implantation barrier layer to form a patterned, composite gate insulating layer, gate electrode and ion implantation barrier structure; forming a second photosensitive layer pattern to define a photodiode region; and implanting low-concentration dopant ions into the substrate using the second photosensitive layer pattern as an ion implantation mask to form a low-concentration dopant region within the photodiode region.
-
Citations
14 Claims
-
1. A method for manufacturing complementary metal oxide semiconductor (CMOS) image sensor structures, comprising the steps of:
-
(a) forming a gate insulating layer, a conductive layer and an ion implantation barrier layer on a semiconductor substrate;
(b) patterning said ion implantation barrier layer, said conductive layer, and said gate insulating layer;
(c) forming a photoresist layer on said patterned ion implantation barrier layer, said conductive layer, and said gate insulating layer and patterning said photoresist layer to define a photodiode region in said substrate; and
(d) implanting low-concentration dopant ions into said photodiode region using said photoresist layer pattern as an ion implantation mask to form a low-concentration dopant region of a photodiode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
Specification