Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
First Claim
Patent Images
1. A method for trimming photoresist features on a semiconductor substrate in a plasma processing system, comprising:
- placing a substrate with a patterned photoresist layer having at least one element with a first prescribed width on the substrate in the plasma processing system;
supplying to the process chamber a process gas mixture comprising a hydrocarbon gas, an oxygen gas, and an inert gas; and
disassociating the process gas mixture to etch the patterned photoresist layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for trimming photoresist features on a semiconductor substrate in a processing system. The method utilizes a process gas mixture comprising a hydrocarbon gas, an oxygen gas and an inert gas. The critical dimension (CD) microloading of the dense and the isolated regions can be eliminated and the photoresist trimming rate can also be reduced to enable better critical dimension (CD) control.
-
Citations
19 Claims
-
1. A method for trimming photoresist features on a semiconductor substrate in a plasma processing system, comprising:
-
placing a substrate with a patterned photoresist layer having at least one element with a first prescribed width on the substrate in the plasma processing system;
supplying to the process chamber a process gas mixture comprising a hydrocarbon gas, an oxygen gas, and an inert gas; and
disassociating the process gas mixture to etch the patterned photoresist layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 18, 19)
-
-
14. The method of clam 13 wherein the pattern density of the dense region is greater than 20%.
-
17. (Canceled)
Specification