Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates

• US 20050066898A1
• Filed: 09/08/2004
• Published: 03/31/2005
• Est. Priority Date: 09/10/2003
• Status: Active Grant

• Current Assignee: Evatec AG
• Original Assignee: Unaxis Balzers (Unaxis)
• Inventors: Sanonnens, Laurent, Elyaakoubi, Mustapha, Schmitt, Jacques, Irzyk, Michael
• Granted Patent: US 7,487,740 B2
• Time in Patent Office: Days
• US Class Current: 118/723.E
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32541 Shape

Abstract

A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.

Claims

1. Vacuum treatment apparatus comprising a vacuum vessel, at least two electrodes defining an internal process space, at least one power supply connectable with said electrodes, a substrate holder for a substrate to be treated in the internal process space and gas inlet means, wherein at least one of said electrodes has along a first cross section a concave profile and has along a second section a convex profile, the first cross section being parallel to the second cross section.

2. A vacuum treatment apparatus according to claim 1, wherein two of said electrodes each have along a first cross section a concave profile and along a second section a convex profile, the first cross section being parallel to the second cross section.

3. A vacuum treatment apparatus according to claim 2, wherein said electrodes are shaped equally.

4. A vacuum treatment apparatus according to claim 1, wherein the power supply is a radiofrequency power supply for frequencies of 13.56 MHz or higher.

5. A vacuum treatment apparatus according to claim 1, wherein at least one of said electrodes is connectable with the power supply at at least two connection points.

6. A vacuum treatment apparatus according to claim 1, wherein the space between said substrate and one of the electrodes is at least partially furnished with a corrective dielectric layer.

7. A vacuum treatment apparatus according to claim 6, wherein one surface of the corrective dielectric layer complements the shape of the electrode.

8. A vacuum treatment apparatus according to claim 6, wherein one surface of the corrective dielectric layer is being adapted to hold the substrate.

9. A vacuum treatment apparatus according to claim 6, wherein the corrective dielectric layer comprises vacuum, gas, alumina, zirconia or quartz.

10. A vacuum treatment apparatus according to claim 1 or 6, wherein the gas inlet system comprises a set of holes in an electrode and/or the corrective dielectric layer to provide gases to the internal process space.

11. A method for treating at least one flat substrate in a vacuum treatment apparatus according to claim 1, comprising the steps of:

introducing said substrate in an internal process space defined between at least two electrodes,

providing gas to the internal process space via gas inlet means

applying power to the internal process space via said electrodes

treating said substrate.

12. A method according to claim 11, wherein treatment comprises one of heating, coating or etching.

13. A method according to claim 11, wherein the substrate comprises one of a glass substrate, a flat panel display, a semiconductor substrate.