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Method and apparatus for determining plasma impedance

  • US 20050067386A1
  • Filed: 09/30/2003
  • Published: 03/31/2005
  • Est. Priority Date: 09/30/2003
  • Status: Active Grant
First Claim
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1. A plasma processing system, comprising:

  • a chamber configured to contain a plasma and including a chuck within an interior area of the chamber, the chuck including a support surface and a bottom surface;

    a first voltage-current probe positioned at a first position located exterior to the chamber and on a radio-frequency transmission line between the chamber and a power source; and

    a simulation module connected to the first voltage-current probe and arranged to solve, based on measurements transmitted from the first voltage-current probe, a radio-frequency model of the radio-frequency transmission line between the first position and a second position located within the chamber.

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